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型号 功能描述 生产厂家 企业 LOGO 操作
IRF6100

HEXFET Power MOSFET

Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing tech niques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load manageme

IRF

IRF6100

HEXFET Power MOSFET

INFINEON

英飞凌

HEXFET Power MOSFET

Description True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load managemen

IRF

Dual Switching Diode Common Cathode

Dual Switching Diode Common Cathode

MOTOROLA

摩托罗拉

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction • Low power los

PANJIT

強茂

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 6.0 Amperes)

VOLTAGE 20 to 100 Volts CURRENT 6.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity •

PANJIT

強茂

Dual Switching Diode Common Cathode

文件:64.53 Kbytes Page:4 Pages

ONSEMI

安森美半导体

FM/IF system and microcomputer-based tuning interface

文件:513.419 Kbytes Page:27 Pages

PHILIPS

飞利浦

IRF6100产品属性

  • 类型

    描述

  • 型号

    IRF6100

  • 功能描述

    MOSFET P-CH 20V 5.1A FLIP-FET

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-5-24 15:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
BGA-4
5000
原装正品,假一罚十
IR
19+
BGA-4
20000
2050
IR
22+
BGA
8000
原装正品支持实单
RFCOMM
25+
BGA
880000
明嘉莱只做原装正品现货
IR
23+
4-Lead FlipFET
7000
N/A
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
22+
MICRO-4
20000
公司只做原装 品质保障
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IR
24+
BGA-4
24200
新进库存/原装
IR
24+
BGA-4
20000
全新原厂原装,进口正品现货,正规渠道可含税!!

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