Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 200V ■ Low RDS(ON) : 1.169 Ω(Typ.)

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Low RDS(on) = 1.25Ω(TYP) • Lower Input Capacitance • Improved Gate Charge • Extended Safe Operating Area • Rugged Gate Oxide Technology

Advanced Power MOSFET

Tape5 tape measures

Range Description A range of two sizes of Professional specification tape measures, offered with a variety of Merchandising options. Features · Autobrake system – automatically stops the tape from recoiling when extended, offering fast and convenient measuring · Magnetic hook tip – The mag

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PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

Innovative Pocket-Sized Measurement Technology

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횠6.35mm mounting Black anodised aluminium housing

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Low Profile

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