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IRF610L中文资料
IRF610L数据手册规格书PDF详情
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.
FEATURES
• Surface mount
• Available in tape and reel
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
IRF610L产品属性
- 类型
描述
- 型号
IRF610L
- 功能描述
MOSFET N-CH 200V 3.3A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
23+ |
TO-263 |
59454 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
VishayIR |
24+ |
TO-262 |
251 |
||||
Vishay Siliconix |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
25+ |
TO-262 |
3675 |
就找我吧!--邀您体验愉快问购元件! |
|||
Vishay Siliconix |
23+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原装正品，支持实单 |
|||
VISHAY/威世 |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
VISHAY |
24+/25+ |
TO-220AB |
2000 |
原装正品现货库存价优 |
|||
VISHAY |
23+ |
NA |
576 |
专做原装正品,假一罚百! |
|||
Vishay |
24+ |
NA |
3056 |
进口原装正品优势供应 |
|||
VISHAY |
24+ |
TO-220 |
12000 |
VISHAY专营进口原装现货假一赔十 |
IRF610LPBF 价格
参考价格：￥4.2661
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IRF610L 芯片相关型号
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