IRF610S价格

参考价格:¥2.6256

型号:IRF610SPBF 品牌:Vishay 备注:这里有IRF610S多少钱,2026年最近7天走势,今日出价,今日竞价,IRF610S批发/采购报价,IRF610S行情走势销售排行榜,IRF610S报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF610S

Surface mount

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

VISHAYVishay Siliconix

威世威世科技公司

IRF610S

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

VISHAYVishay Siliconix

威世威世科技公司

IRF610S

HEXFET Power MOSFET

DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It

IRF

IRF610S

Power MOSFET

VISHAYVishay Siliconix

威世威世科技公司

IRF610S

HEXFET Power MOSFET

INFINEON

英飞凌

Power MOSFET

FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.79 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET짰 Power MOSFET

文件:1.87143 Mbytes Page:9 Pages

IRF

Power MOSFET

文件:237.79 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Power MOSFET

文件:237.79 Kbytes Page:10 Pages

VISHAYVishay Siliconix

威世威世科技公司

Voltage Variable Capacitance Diode (Tuning Diode)

Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con

NTE

General Purpose Rectifier (200-300 Amperes Average 1200 Volts)

Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat

POWEREX

Phase Control SCR (125-175 Amperes Avg 100-1600 Volts)

Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators

POWEREX

SCR

DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA

STMICROELECTRONICS

意法半导体

P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source.

NEC

瑞萨

IRF610S产品属性

  • 类型

    描述

  • 型号

    IRF610S

  • 功能描述

    MOSFET N-Chan 200V 3.3 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-15 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VISHAY
25+23+
TO-263
27232
绝对原装正品全新进口深圳现货
IR
22+
D2-PAK
8000
原装正品支持实单
IR
24+
D2-Pak
8866
VISHAY/威世
23+
SOT-263
1739
原装正品实单必成
IR
23+
SOT263
7000
IR
22+
TO-263
20000
公司只做原装 品质保障
VISHAY(威世)
2447
TO-263-3
105000
800个/圆盘一级代理专营品牌!原装正品,优势现货,长
IR
1923+
TO-263
6896
原装进口现货库存专业工厂研究所配单供货
VISHAY
23+
TO-263
62876
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
20+
TO-263
1000
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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