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IRF610S价格
参考价格:¥2.6256
型号:IRF610SPBF 品牌:Vishay 备注:这里有IRF610S多少钱,2026年最近7天走势,今日出价,今日竞价,IRF610S批发/采购报价,IRF610S行情走势销售排行榜,IRF610S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF610S | Surface mount DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF610S | Power MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF610S | HEXFET Power MOSFET DESCRIPTION Third Generation MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SMD-220 is a surface mount power package capable of accommodating die sizes up to HEX-4. It | IRF | ||
IRF610S | Power MOSFET | VISHAYVishay Siliconix 威世威世科技公司 | ||
IRF610S | HEXFET Power MOSFET | INFINEON 英飞凌 | ||
Power MOSFET FEATURES • Surface mount • Available in tape and reel • Dynamic dV/dt rating • Repetitive avalanche rated • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datashee | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It pro | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:237.79 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
HEXFET짰 Power MOSFET 文件:1.87143 Mbytes Page:9 Pages | IRF | |||
Power MOSFET 文件:237.79 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Power MOSFET 文件:237.79 Kbytes Page:10 Pages | VISHAYVishay Siliconix 威世威世科技公司 | |||
Voltage Variable Capacitance Diode (Tuning Diode) Description: These diodes are designed for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. Features: High Q with Guaranteed Minimum Values Con | NTE | |||
General Purpose Rectifier (200-300 Amperes Average 1200 Volts) Features: □ Standard and Reverse Polarities □ Flag Lead and Stud Top Terminals Available □ High Surge Current Ratings □ High Rated Blocking Voltage □ Special Electrical Selection for Parallel and Series Operation □ Compression Bonded Encapsulation □ JAN Types Available Applicat | POWEREX | |||
Phase Control SCR (125-175 Amperes Avg 100-1600 Volts) Phase Control SCR 125-175 Amperes Avg 100-1600 Volts Applications: □ Power Supplies □ Battery Chargers □ Motor Control □ Light Dimmers □ VAR Generators | POWEREX | |||
SCR DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. FEATURES ■ HIGH SURGE CAPA | STMICROELECTRONICS 意法半导体 | |||
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The µPA610TA is a switching device which can be driven directly by a 2.5 V power source. The µPA610TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source. | NEC 瑞萨 |
IRF610S产品属性
- 类型
描述
- 型号
IRF610S
- 功能描述
MOSFET N-Chan 200V 3.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
25+23+ |
TO-263 |
27232 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
D2-PAK |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
VISHAY/威世 |
23+ |
SOT-263 |
1739 |
原装正品实单必成 |
|||
IR |
23+ |
SOT263 |
7000 |
||||
IR |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
VISHAY(威世) |
2447 |
TO-263-3 |
105000 |
800个/圆盘一级代理专营品牌!原装正品,优势现货,长 |
|||
IR |
1923+ |
TO-263 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
VISHAY |
23+ |
TO-263 |
62876 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
20+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
IRF610S规格书下载地址
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