200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. Features • 3.3A, 200V, RDS(on)= 1.5Ω@VGS= 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switch

200V N-Channel MOSFET

Compact, Portable IP67 Military Fast Ethernet Switch

PRODUCT DESCRIPTION Ethernet is becoming the standard for IP-based components in a wide range of military and commercial land, sea, and air applications. When building communications where data prioritization is not a concern and the amount of traffic is low, unmanaged, Fast Ethernet switche

Pulse Encapsulated P.C. Board Mount

Features These ferrite cored transformers are fully encapsulated in a high grade black molded case with a UL94V-O rating. Units are intended for wide band and pulse applications including thyristor / triac firing circuits. Peak pulse voltage rating maximum of 250V. Insulation tested to 1,000

Innovative Pocket-Sized Measurement Technology

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횠6.35mm mounting Black anodised aluminium housing

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Low Profile

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