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位置：首页 > IC中文资料第3409页 > IRF380

IRF380价格

参考价格：￥10.5501

型号：IRF3805PBF 品牌：International Rectifier 备注：这里有IRF380多少钱，2025年最近7天走势，今日出价，今日竞价，IRF380批发/采购报价，IRF380行情走势销售排行榜，IRF380报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3805

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805L

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805L-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805LPBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805PBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805S

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805S-7P

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805S-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805SPBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3808

Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A??

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tempe

IRF

IRF3808

Integrated Starter Alternator

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

KERSEMI

IRF3808L

AUTOMOTIVE MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

IRF

IRF3808LPBF

Advanced Process Technology

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

IRF

IRF3808PBF

HEXFET Power MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET Æ Power MOSFET utilizes the latest process ing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating tem

IRF

IRF3808S

AUTOMOTIVE MOSFET

Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temper

IRF

IRF3808SPBF

AUTOMOTIVE MOSFET

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

IRF

IRF3808SPBF

Advanced Process Technology

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

IRF

IRF3808STRRPBF

High Efficiency Synchronous Rectification in SMPS

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

IRF

IRF3805

N-Channel MOSFET Transistor

文件：339.23 Kbytes Page：2 Pages

ISC

无锡固电

IRF3805L-7PPBF

HEXFET® Power MOSFET

Infineon

英飞凌

IRF3805LPBF

HEXFET® Power MOSFET

Infineon

英飞凌

IRF3805LPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VishayVishay Siliconix

威世威世科技公司

IRF3805PBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

IRF

IRF3805PBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VishayVishay Siliconix

威世威世科技公司

IRF3805PBF_15

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

IRF

IRF3805S

Isc N-Channel MOSFET Transistor

文件：300.09 Kbytes Page：2 Pages

ISC

无锡固电

IRF3805S

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

IRF3805S-7PPBF_15

Advanced Process Technology

文件：346.28 Kbytes Page：11 Pages

IRF

IRF3805SLPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VishayVishay Siliconix

威世威世科技公司

IRF3805SPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VishayVishay Siliconix

威世威世科技公司

IRF3808

N-Channel MOSFET Transistor

文件：338.85 Kbytes Page：2 Pages

ISC

无锡固电

IRF3808L

Isc N-Channel MOSFET Transistor

文件：300.96 Kbytes Page：2 Pages

ISC

无锡固电

IRF3808LPBF

Advanced Process Technology

文件：264.76 Kbytes Page：12 Pages

IRF

IRF3808PBF_15

Advanced Process Technology

文件：251.94 Kbytes Page：9 Pages

IRF

IRF3808S

Isc N-Channel MOSFET Transistor

文件：189.54 Kbytes Page：2 Pages

ISC

无锡固电

IRF3808SLPBF

Advanced Process Technology

文件：264.76 Kbytes Page：12 Pages

IRF

IRF3808SPBF

Advanced Process Technology

文件：264.76 Kbytes Page：12 Pages

IRF

IRF3808SPBF_15

Advanced Process Technology

文件：264.76 Kbytes Page：12 Pages

IRF

380

ROD SEALS

DESCRIPTION The BECA 380 profile is a rod seal composed of a sloped metal cage embedded in rubber, and two sealing lips. The BECA 383 profile is a rod seal with the advantage of having a sealing bead on the outside lip; the metal cage is not sloped compared to the BECA 380 profile. A

FRANCEJOINT

380

Series 380, 53/RV4, 485 2 Watt, Conductive Plastic Potentiometer

Features •Series 380 1% dynamic noise 100,000 сycle life Stainless-steel shaft •Series 53/RV4 Economical Wide range of values and tapers Shaft and mounting seals available •Series 485 1% dynamic noise I million cycle life Available on special order only

Honeywell

霍尼韦尔

380

Precision Vise Combinations

Model 201 Features: > The easy-to-use single knob controls head movement through 3-planes: 210° Tilt, 360° Turn & 360° Rotation > Fine/coarse adjusting knob controls jaw pressure for delicate work > Grooved jaws are excellent for holding small objects and are made of reinforced thermal compos

PanaVise

380

FEMALE THREADED STANDOFFS

文件：211.1 Kbytes Page：1 Pages

KEYSTONE

Keystone Electronics Corp.

380

Celeron M Processor on 90 nm Process

文件：879.41 Kbytes Page：68 Pages

Intel

英特尔

IRF380产品属性

  • 类型

    描述

  • 型号

    IRF380

  • 功能描述

    MOSFET N-CH 55V 75A TO-220AB

  • RoHS

    否

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • 型

    MOSFET N 通道，金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds（最大）@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A，10V Id 时的

  • Vgs(th)（最大）

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

IRF380供应商更多...

更新时间：2025-12-16 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
IRF3805STRLPBF
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市创盛芯科技有限公司
IRF3805S
INFINEON/英飞凌
25+
TO-263
400
全新原装正品支持含税
询价
深圳市昌和盛利电子有限公司
IRF3805S
IR
NEW
TO-263
35890
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
深圳市赛美科科技有限公司
IRF3805S
IR
NA
8560
一级代理 原装正品假一罚十价格优势长期供货
询价
深圳市得捷芯城科技有限公司
IRF3805S
IR
24+
NA/
6215
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市胜彬电子有限公司
IRF3805S
IR
22+
SOP-8
8000
原装正品支持实单
询价
深圳市恒达亿科技有限公司
IRF3805S
IR
25+
TO263
3000
全新原装、诚信经营、公司现货销售
询价
深圳市毅创腾电子科技有限公司
IRF3805S
IR
23+
TO-263
6500
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
深圳市一线半导体有限公司
IRF3805S
IR
24+
D2-Pak
8866
询价
深圳市斌腾达科技有限公司
IRF3805S
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
询价

IRF380芯片相关品牌

IRF380规格书下载地址

IRF380参数引脚图相关

IRF380数据表相关新闻

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