位置：首页 > IC中文资料第3409页 > IRF3805L-7PPBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3805L-7PPBF | HEXFET짰 Power MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF |   | |
HEXFET짰 Power MOSFET V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des | IRF | | ||
Ultra Low On-Resistance 文件：311.87 Kbytes Page：14 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Advanced Process Technology 文件：748.76 Kbytes Page：12 Pages | Infineon 英飞凌 | |
IRF3805L-7PPBF产品属性
- 类型
描述
- 型号
IRF3805L-7PPBF
- 功能描述
MOSFET MOSFT 55V 240A 2.6mOhm 130nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-263-7 |
20500 |
汽车电子原装主营-可开原型号增税票 |
|||
ir |
24+ |
500000 |
行业低价,代理渠道 |
||||
IR |
14+13+PBF |
TO-262 |
13021 |
现货 |
|||
IR |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-262 |
13380 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
24+ |
NA/ |
10460 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO-262 |
5000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
23+ |
TO-263-7 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRF3805L-7PPBF规格书下载地址
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2019-12-17
DdatasheetPDF页码索引
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