型号 功能描述 生产厂家 企业 LOGO 操作
IRF3808LPBF

Advanced Process Technology

Description This Advanced Planar Stripe HEXFET ® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, low RθJC, fast switching speed and improved

IRF

IRF3808LPBF

Advanced Process Technology

文件:264.76 Kbytes Page:12 Pages

IRF

IRF3808LPBF

Advanced Process Technology

Infineon

英飞凌

High Efficiency Switch Mode Li-Ion Battery Charger

GENERAL DESCRIPTION The ADP3808 is a complete Li-Ion battery charging controller for 3- or 4-cell battery packs. The device combines accurate final battery charge voltage control with constant current control to simplify the implementation of constant-current, constant-voltage (CCCV) chargers.

AD

亚德诺

High Efficiency Switch Mode Li-Ion Battery Charger

High Efficiency Switch Mode Li-Ion Battery Charger The ADP3808A is a complete Li-Ion battery charging controller for 3−or 4−cell battery packs. The device combines accurate final battery charge voltage control with constant current control to simplify the implementation of constant-current,

ONSEMI

安森美半导体

High Efficiency Switch Mode Li-Ion Battery Charger

GENERAL DESCRIPTION The ADP3808 is a complete Li-Ion battery charging controller for 3- or 4-cell battery packs. The device combines accurate final battery charge voltage control with constant current control to simplify the implementation of constant-current, constant-voltage (CCCV) chargers.

AD

亚德诺

High Efficiency Switch Mode Li-Ion Battery Charger

GENERAL DESCRIPTION The ADP3808 is a complete Li-Ion battery charging controller for 3- or 4-cell battery packs. The device combines accurate final battery charge voltage control with constant current control to simplify the implementation of constant-current, constant-voltage (CCCV) chargers.

AD

亚德诺

Dual N-Channel 20-V (D-S) MOSFET

文件:407.94 Kbytes Page:5 Pages

AnalogPower

IRF3808LPBF产品属性

  • 类型

    描述

  • 型号

    IRF3808LPBF

  • 功能描述

    MOSFET N-CH 75V 106A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-29 18:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IR
21+
TO-220
30000
百域芯优势 实单必成 可开13点增值税
IR
23+
TO-220
5500
现货,全新原装
IR
24+
TO-262-3
140
IR
17+
TO-220
6200
100%原装正品现货
IR
23+
TO-220AB
5000
原装正品,假一罚十
VISHAY
24+
TO-220
12000
VISHAY专营进口原装现货假一赔十
IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
IR
1728+
TO-220AB
8500
只做原装进口,假一罚十
Infineon Technologies
23+
TO2623 Long Leads I2Pak TO262A
9000
原装正品,支持实单

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