AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

55V 单 N 通道 HEXFET 功率 MOSFET，采用 7 引脚 D2-Pak 封装

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

Advanced Process Technology

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HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 240A@ TC=25℃ · Drain Source Voltage -VDSS= 55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

Ultra Low On-Resistance

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Advanced Process Technology

文件：748.76 Kbytes Page：12 Pages