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IRF3805S中文资料
IRF3805S数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 3.3mΩ
ID = 75A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device
for use in Automotive applications and a wide variety of other applications.
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
IRF3805S产品属性
- 类型
描述
- 型号
IRF3805S
- 功能描述
MOSFET N-CH 55V 75A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
24+ |
TO263-7 |
3955 |
只做原厂渠道 可追溯货源 |
|||
INFINEON/IR |
07+ |
50 |
D2-PAK (TO-263) |
||||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/IR |
23+ |
D2-PAK (TO-263) |
50 |
原装现货支持送检 |
|||
IR |
17+ |
D2-Pak7-Lead |
31518 |
原装正品 可含税交易 |
|||
IR |
2021+ |
TO263 |
6800 |
原厂原装,欢迎咨询 |
|||
Infineon(英飞凌) |
24+ |
D2PAK-7P |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
2405+ |
TO-263 |
4475 |
原装现货力挺实单 |
|||
IR |
24+ |
TO-263 |
501285 |
免费送样原盒原包现货一手渠道联系 |
IRF3805STRLPBF 价格
参考价格：￥6.6294
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