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IRF3805S价格
参考价格：￥16.3721
型号：IRF3805S-7PPBF 品牌：INTERNATIONAL 备注：这里有IRF3805S多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3805S批发/采购报价，IRF3805S行情走势销售排行榜，IRF3805S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3805S | AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF |   | |
IRF3805S | Isc N-Channel MOSFET Transistor 文件：300.09 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF3805S | 采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | | ||
HEXFET짰 Power MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
55V 单 N 通道 HEXFET 功率 MOSFET，采用 7 引脚 D2-Pak 封装 | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：346.28 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
ALUMINUM NEMA 4X BOX WITH EMI/RFI SHIELDING 文件：136.2 Kbytes Page：3 Pages | BUD | | ||
Ultra Low On-Resistance 文件：388.08 Kbytes Page：15 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
AUTOMOTIVE GRADE 文件：764.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
HEXFET짰 Power MOSFET 文件：388.08 Kbytes Page：15 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：388.08 Kbytes Page：15 Pages | IRF | |
IRF3805S产品属性
- 类型
描述
- 型号
IRF3805S
- 功能描述
MOSFET N-CH 55V 75A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA |
800 |
原装现货,专业配单专家 |
|||
IR |
20+ |
D2Pak7Lead |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
|||
IR |
25+23+ |
TO263 |
31436 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
SOP-8 |
8000 |
原装正品支持实单 |
|||
Infineon/英飞凌 |
24+ |
D2PAK-7P |
25000 |
原装正品,假一赔十! |
|||
INFINEON |
2450+ |
TO-263 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Infineon/英飞凌 |
21+ |
D2PAK-7P |
6820 |
只做原装,质量保证 |
|||
IR |
25+ |
TO263 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
23+ |
TO-263 |
6500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
IRF3805S规格书下载地址
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IRF3805S数据表相关新闻
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2021-8-9IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17
DdatasheetPDF页码索引
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