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IRF3805价格
参考价格：￥10.5501
型号：IRF3805PBF 品牌：International Rectifier 备注：这里有IRF3805多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3805批发/采购报价，IRF3805行情走势销售排行榜，IRF3805报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3805 | AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF |   | |
IRF3805 | N-Channel MOSFET Transistor 文件：339.23 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF3805 | 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 | Infineon 英飞凌 | | |
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
HEXFET짰 Power MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | | ||
HEXFET짰 Power MOSFET VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope | IRF | | ||
AUTOMOTIVE MOSFET VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper | IRF | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET® Power MOSFET | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | IRF | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | IRF | | ||
采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET | Infineon 英飞凌 | | ||
Isc N-Channel MOSFET Transistor 文件：300.09 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：346.28 Kbytes Page：11 Pages | IRF | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Process Technology 文件：394.62 Kbytes Page：12 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
ALUMINUM NEMA 4X BOX WITH EMI/RFI SHIELDING 文件：136.2 Kbytes Page：3 Pages | BUD | | ||
Ultra Low On-Resistance 文件：388.08 Kbytes Page：15 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
AUTOMOTIVE GRADE 文件：764.15 Kbytes Page：13 Pages | Infineon 英飞凌 | | ||
HEXFET짰 Power MOSFET 文件：388.08 Kbytes Page：15 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：388.08 Kbytes Page：15 Pages | IRF | |
IRF3805产品属性
- 类型
描述
- 型号
IRF3805
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
AUTOMOTIVE MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon(英飞凌) |
2511 |
标准封装 |
7000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
12500 |
原装正品支持实单 |
|||
Infineon |
23+ |
MOSFET |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
Infineon/英飞凌 |
24+ |
D2PAK-7P |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
23+ |
D2-pak |
203322 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon/英飞凌 |
23+ |
D2PAK-7P |
12700 |
买原装认准中赛美 |
|||
24+ |
N/A |
54000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
IR |
2015+ |
D2-Pak |
12500 |
全新原装,现货库存长期供应 |
|||
INFINEON TECHNOLOGIES AG |
25+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
IRF3805规格书下载地址
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2021-8-9IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
IRF521，IRF523，IRF511，IRF512，IRF512S2532，IRF540，IRF540P2，IRF540RP2，IRF541，IRF542，IRF543，IRF531，IRF532，IRF640，IRF640R，IRF640S2470
2019-12-17
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