IRF3805价格

参考价格:¥10.5501

型号:IRF3805PBF 品牌:International Rectifier 备注:这里有IRF3805多少钱,2026年最近7天走势,今日出价,今日竞价,IRF3805批发/采购报价,IRF3805行情走势销售排行榜,IRF3805报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3805

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805

N-Channel MOSFET Transistor

文件:339.23 Kbytes Page:2 Pages

ISC

无锡固电

IRF3805

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

INFINEON

英飞凌

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

HEXFET® Power MOSFET

INFINEON

英飞凌

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

IRF

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

Isc N-Channel MOSFET Transistor

文件:300.09 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:346.28 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

Advanced Process Technology

文件:394.62 Kbytes Page:12 Pages

VISHAYVishay Siliconix

威世威世科技公司

ALUMINUM NEMA 4X BOX WITH EMI/RFI SHIELDING

文件:136.2 Kbytes Page:3 Pages

BUD

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

IRF3805产品属性

  • 类型

    描述

  • 型号

    IRF3805

  • 功能描述

    MOSFET N-CH 55V 75A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-1 17:02:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货
IR
24+
TO-262
8866
IR
1706+
TO-220
50
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
2406+
TO-220
14000
诚信经营!进口原装!量大价优!
IR
26+
WLCSP-28
86720
全新原装正品价格最实惠 假一赔百
Infineon Technologies
23+
原装
7000
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
20+
TO-220
38900
原装优势主营型号-可开原型号增税票
IR
23+
TO-220
65400
INFINEON/IR
07+
50
D2-PAK (TO-263)

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