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位置：首页 > IC中文资料 > IRF3805

IRF3805价格

参考价格：￥10.5501

型号：IRF3805PBF 品牌：International Rectifier 备注：这里有IRF3805多少钱，2026年最近7天走势，今日出价，今日竞价，IRF3805批发/采购报价，IRF3805行情走势销售排行榜，IRF3805报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3805

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805

55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n• Optimized for broadest availability from distribution partners\n• Product qualification according to JEDEC standard\n• Optimized for 10V gate-drive voltage (called Normal level)\n• Industry standard through-hole power package\n• High-current carrying capability package (upto 195A, die-size ;

INFINEON

英飞凌

IRF3805

N-Channel MOSFET Transistor

文件：339.23 Kbytes Page：2 Pages

ISC

无锡固电

IRF3805L

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805L-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805LPBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805LPBF

HEXFET® Power MOSFET

VDSS = 55V\nRDS(on) = 3.3mΩ\nID = 75ADescription\nSpecifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperat Advanced Process Technology\nUltra Low On-Resistance\n175°C Operating Temperature\nFast Switching\nRepetitive Avalanche Allowed up to Tjmax\nLead-Free;

INFINEON

英飞凌

IRF3805PBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805S

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805S

采用 D2-Pak 封装的 55V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 快速开关\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF3805S-7P

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805S-7PPBF

HEXFET짰 Power MOSFET

VDSS = 55V RDS(on) = 2.6mΩ ID = 160A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ope

IRF

IRF3805SPBF

AUTOMOTIVE MOSFET

VDSS = 55V RDS(on) = 3.3mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction oper

IRF

IRF3805LPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF3805PBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF3805PBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

IRF

IRF3805PBF_15

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

IRF

IRF3805S

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：300.09 Kbytes Page：2 Pages

ISC

无锡固电

IRF3805S-7PPBF_15

Advanced Process Technology

文件：346.28 Kbytes Page：11 Pages

IRF

IRF3805SLPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

IRF3805SPBF

Advanced Process Technology

文件：394.62 Kbytes Page：12 Pages

VISHAYVishay Siliconix

威世威世科技公司

SMZG3805

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

UCC3805D

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

TI

德州仪器

UCC3805DTR

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

TI

德州仪器

UCC3805N

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

TI

德州仪器

UCC3805PW

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

TI

德州仪器

IRF3805产品属性

  • 类型

    描述

  • OPN：

    IRF3805PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    55 V

  • RDS (on) @10V max：

    3.3 mΩ

  • ID @25°C max：

    210 A

  • QG typ @10V：

    190 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF3805供应商更多...

更新时间：2026-8-4 15:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市拓亿芯电子有限公司
IRF3805PBF
MAXIMUM
26+
TO-220
12000
只做原装正品
询价
深圳市科恒伟业电子有限公司
IRF3805STRLPBF
INFINEON
2450+
TO-263
8850
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市明嘉莱科技有限公司
IRF3805STRLPBF
INFINEON TECHNOLOGIES AG
25+
SMD
918000
明嘉莱只做原装正品现货
询价
深圳市美思瑞电子科技有限公司
IRF3805S
IR
22+
D2-PAK
9450
原装正品，实单请联系
询价
深圳市赛尔通科技有限公司
IRF3805PBF
IR
23+
TO-220
65400
询价
深圳市华高宇电子有限公司
IRF3805SPBF
INFINEON/IR
07+
50
D2-PAK (TO-263)
询价
深圳市天芯威科技有限公司
IRF3805STRL-7PP
Infineon(英飞凌)
23+
25900
新到现货,只有原装
询价
深圳市河锋鑫科技有限公司
IRF3805S-7P
IR
17+
D2-Pak7-Lead
31518
原装正品 可含税交易
询价
深圳市创新迹电子有限公司
IRF3805STRLPBF
IR
2021+
TO263
6800
原厂原装,欢迎咨询
询价
柒号芯城电子商务(深圳)有限公司
IRF3805LPBF
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价

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IRF3805规格书下载地址

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