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位置：首页 > IC中文资料 > IRF34

IRF34价格

参考价格：￥4.1392

型号：IRF3415PBF 品牌：INTERNATIONAL 备注：这里有IRF34多少钱，2026年最近7天走势，今日出价，今日竞价，IRF34批发/采购报价，IRF34行情走势销售排行榜，IRF34报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF340

N-Channel Power MOSFETs, 10A, 350V/400V

FAIRCHILD

仙童半导体

IRF340

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

SAMSUNG

三星

IRF340

TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)

The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and di

IRF

IRF340-343

N-Channel Power MOSFETs, 10A, 350V/400V

FAIRCHILD

仙童半导体

IRF341

N-Channel Power MOSFETs, 10A, 350V/400V

FAIRCHILD

仙童半导体

IRF341

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

SAMSUNG

三星

IRF3415

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF3415L

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415L

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415SPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRLPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF342

isc N-Channel MOSFET Transistor

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for Fast Switching Speeds • IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature • Rugged APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor cont

ISC

无锡固电

IRF342

N-Channel Power MOSFETs, 10A, 350V/400V

FAIRCHILD

仙童半导体

IRF342

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

SAMSUNG

三星

IRF343

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

SAMSUNG

三星

IRF343

N-Channel Power MOSFETs, 10A, 350V/400V

FAIRCHILD

仙童半导体

IRF343

isc N-Channel MOSFET Transistor

DESCRIPTION • VGS Rated at ±20V • Silicon Gate for Fast Switching Speeds • IDSS,VDS(on),SOA and VGS(th) specified at Elevated temperature • Rugged APPLICATIONS • Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor cont

ISC

无锡固电

IRF340

isc N-Channel MOSFET Transistor

文件：49.02 Kbytes Page：2 Pages

ISC

无锡固电

IRF340

400V, N-CHANNEL

文件：89.91 Kbytes Page：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF340

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

ARTSCHIP

IRF340

Repetitive Avalanche Ratings

文件：149.35 Kbytes Page：7 Pages

IRF

IRF340

N-Channel Power MOSFETs, 10A, 350V/400V

ONSEMI

安森美半导体

IRF340_15

Repetitive Avalanche Ratings

文件：149.35 Kbytes Page：7 Pages

IRF

IRF341

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

ARTSCHIP

IRF341

Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF341

isc N-Channel MOSFET Transistor

文件：47.83 Kbytes Page：2 Pages

ISC

无锡固电

IRF3410

N-Channel 100-V (D-S) MOSFET

文件：1.77683 Mbytes Page：8 Pages

VBSEMI

微碧半导体

IRF3415

N-Channel MOSFET Transistor

文件：338.14 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3415L

Isc N-Channel MOSFET Transistor

文件：299.81 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415PBF_15

ADVANCED PROCESS TECHNOLOGY

文件：208.79 Kbytes Page：9 Pages

IRF

IRF3415S

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：188.54 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415SPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：1.07203 Mbytes Page：11 Pages

IRF

IRF342

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

ARTSCHIP

IRF343

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

ARTSCHIP

IRF34产品属性

  • 类型

    描述

  • Maximum Power Dissipation：

    125000mW

  • Maximum Drain Source Voltage：

    350V

  • Maximum Continuous Drain Current：

    10A

  • Configuration：

    Single

  • Channel Type：

    N

  • Category：

    Power MOSFET

IRF34供应商更多...

更新时间：2026-5-24 15:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
洪芯国际半导体（深圳）有限公司
IRF340
IR
26+
SOP8-MSOP10-DFN10
86720
全新原装正品价格最实惠 假一赔百
询价
齐创科技(上海,北京,青岛)有限公司
IRF340CN
HARRIS
23+
DIP
5000
原装正品,假一罚十
询价
深圳诚思涵科技有限公司
IRF340
IR
18+
TO-3
85600
保证进口原装可开17%增值税发票
询价
艾睿（深圳）半导体有限公司
IRF340
IR
2447
TO-3
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
天津市博通航睿技术有限公司
IRF340R
IR
23+
TO-3
7000
询价
深圳市创新迹电子有限公司
IRF340
IOR
22+
TO-3
20000
公司只做原装 品质保障
询价
中天科工半导体（深圳）有限公司
IRF340R
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
深圳市能元时代电子有限公司
IRF340
NO
23+
52461
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市河锋鑫科技有限公司
IRF340R
IR
22+
TO-3
6000
终端可免费供样,支持BOM配单
询价
深圳市昊创电子有限公司
IRF340
IR/MOT
专业铁帽
TO-3
500
原装铁帽专营,代理渠道量大可订货
询价

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