型号 功能描述 生产厂家 企业 LOGO 操作
IRF3415STRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Dual MOSFET Driver with Bootstrapping

GENERAL DESCRIPTION The ADP3415 is a dual MOSFET driver optimized for driving two N-channel FETs that are the two switches in the nonisolated synchronous buck power converter topology. Each driver size is optimized for performance in notebook PC regulators for CPUs in the 20 A range. The high-sid

AD

亚德诺

MSP 34x5G Multistandard Sound Processor Family

[Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal

ETCList of Unclassifed Manufacturers

未分类制造商

Multistandard Sound Processors

文件:472.95 Kbytes Page:71 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3415STRR产品属性

  • 类型

    描述

  • 型号

    IRF3415STRR

  • 功能描述

    MOSFET N-CH 150V 43A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2026-3-15 18:28:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+23+
TO263
74472
绝对原装正品现货,全新深圳原装进口现货
Infineon Technologies
23+
原装
7000
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
23+
TO-263
50345
##公司主营品牌长期供应100%原装现货可含税提供技术
IR
05+
TO-220
34
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon Technologies
21+
D2PAK
800
100%进口原装!长期供应!绝对优势价格(诚信经营)!
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
IR
23+
TO-220
50000
全新原装正品现货,支持订货
Infineon Technologies
22+
TO2633 D2Pak (2 Leads + Tab) T
9000
原厂渠道,现货配单
IR
24+
TO-263
3200
只做原装正品现货 欢迎来电查询15919825718

IRF3415STRR数据表相关新闻