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IRF3415STRLPBF中文资料
IRF3415STRLPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low profile applications
● Advanced Process Technology
● Surface Mount (IRF3415S)
● Low-profile through-hole (IRF3415L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRF3415STRLPBF产品属性
- 类型
描述
- 型号
IRF3415STRLPBF
- 功能描述
MOSFET MOSFT 150V 43A 42mOhm 133.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO263 |
32360 |
INFINEON/英飞凌全新特价IRF3415STRLPBF即刻询购立享优惠#长期有货 |
|||
INFINEON |
23+ |
原封 □ |
21500 |
INFINEON优势 /原装现货长期供应现货支持 |
|||
IR |
24+ |
D2-PAK |
5000 |
只做原厂渠道 可追溯货源 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
13448 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
24+ |
TO-263 |
501277 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
Infineon(英飞凌) |
23+ |
25650 |
新到现货,只做原装进口 |
||||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
7500 |
IRF3415STRLPBF-CUTTAPE 价格
参考价格:¥5.9564
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