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IRF3415S价格
参考价格：￥4.8122
型号：IRF3415SPBF 品牌：INTERNATIONAL 备注：这里有IRF3415S多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3415S批发/采购报价，IRF3415S行情走势销售排行榜，IRF3415S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3415S | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRF3415S | Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | |
IRF3415S | Isc N-Channel MOSFET Transistor 文件：188.54 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF3415S | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.07203 Mbytes Page：11 Pages | IRF | | ||
P-Channel Enhancement Mode Power MOSFET Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
-4.0A竊?20V P-CHANNEL MOSFET 文件：122 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
12V P-channel MOS FET 文件：165.46 Kbytes Page：2 Pages | FUMAN 富满微 | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | |
IRF3415S产品属性
- 类型
描述
- 型号
IRF3415S
- 功能描述
MOSFET N-CH 150V 43A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
NA/ |
35750 |
原装现货,当天可交货,原型号开票 |
|||
INFINEON/英飞凌 |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
22 |
263 |
IR |
11 |
92 |
|||
IR |
25+23+ |
SOT263 |
18331 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
NEW |
TO-252 |
19526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
IR |
17+ |
TO-263 |
6200 |
100%原装正品现货 |
|||
IR |
25+ |
11 |
860000 |
明嘉莱只做原装正品现货 |
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IRF3415S规格书下载地址
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IRF3415S数据表相关新闻
IRF520NPBF
全新原装现货 支持第三方机构验证
2022-10-19IRF3710STRLPBF 原装正品
INFINEON/英飞凌 现货100K
2022-7-6IRF3205ZSTRLPBF
IRF3205ZSTRLPBF
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2021-8-9IRF3205PBF公司大量原装现货/随时可以发货
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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