IRF3415S价格

参考价格:¥4.8122

型号:IRF3415SPBF 品牌:INTERNATIONAL 备注:这里有IRF3415S多少钱,2025年最近7天走势,今日出价,今日竞价,IRF3415S批发/采购报价,IRF3415S行情走势销售排行榜,IRF3415S报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF3415S

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF
IRF3415S

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF
IRF3415S

Isc N-Channel MOSFET Transistor

文件:188.54 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

International Rectifier

IRF

ADVANCED PROCESS TECHNOLOGY

文件:1.07203 Mbytes Page:11 Pages

IRF

International Rectifier

IRF

P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORDGOFORD SEMICONDUCTOR

谷峰半导体

GOFORD

-4.0A竊?20V P-CHANNEL MOSFET

文件:122 Kbytes Page:5 Pages

KIAKIA Semiconductor Technology

可易亚半导体广东可易亚半导体科技有限公司

KIA

12V P-channel MOS FET

文件:165.46 Kbytes Page:2 Pages

FUMANFine Made Microelectronics Group Co.,Ltd.

富满微富满微电子集团股份有限公司

FUMAN

Heyco® PG and Metric Threaded Plugs

文件:114.81 Kbytes Page:1 Pages

HeycoHeyco.

海科

Heyco

Heyco® PG and Metric Threaded Plugs

文件:114.81 Kbytes Page:1 Pages

HeycoHeyco.

海科

Heyco

IRF3415S产品属性

  • 类型

    描述

  • 型号

    IRF3415S

  • 功能描述

    MOSFET N-CH 150V 43A D2PAK

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-8-5 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR/VISHAY
22+
SOT-263
100000
代理渠道/只做原装/可含税
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
INFINEON/英飞凌
25+
TO263
54648
百分百原装现货 实单必成 欢迎询价
Infineon(英飞凌)
2511
TO-263-2
9550
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
Infineon
23+
D2PAK
15500
英飞凌优势渠道全系列在售
Infineon/英飞凌
23+
TO-263-2
12700
买原装认准中赛美
IR
1520+
TO263-5
700
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
2021+
45000
十年专营原装现货,假一赔十
INFINEON
23+
原封 □
21500
INFINEON优势 /原装现货长期供应现货支持
IR
1948+
TO-263
18562
只做原装正品现货!或订货假一赔十!

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