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IRF3415S价格
参考价格：￥4.8122
型号：IRF3415SPBF 品牌：INTERNATIONAL 备注：这里有IRF3415S多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3415S批发/采购报价，IRF3415S行情走势销售排行榜，IRF3415S报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3415S | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRF3415S | Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | |
IRF3415S | Isc N-Channel MOSFET Transistor 文件：188.54 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF3415S | 150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Infineon 英飞凌 | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.07203 Mbytes Page：11 Pages | IRF | | ||
P-Channel Enhancement Mode Power MOSFET Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
-4.0A竊?20V P-CHANNEL MOSFET 文件：122 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
12V P-channel MOS FET 文件：165.46 Kbytes Page：2 Pages | FUMAN 富满微 | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | |
IRF3415S产品属性
- 类型
描述
- 型号
IRF3415S
- 功能描述
MOSFET N-CH 150V 43A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
Infineon(英飞凌) |
2511 |
TO-263-2 |
9550 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
IR |
25+ |
SOT-263 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
TO-263 |
30000 |
代理全新原装现货,价格优势 |
|||
INFINEON |
23+ |
原封 □ |
21500 |
INFINEON优势 /原装现货长期供应现货支持 |
|||
ir |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
25800 |
原装正品支持实单 |
|||
INFINEON |
23+ |
TO-263 |
10065 |
原装正品,有挂有货,假一赔十 |
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IRF3415S数据表相关新闻
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全新原装现货 支持第三方机构验证
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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