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位置：首页 > IC中文资料第2127页 > IRF3415

IRF3415价格

参考价格：￥4.1392

型号：IRF3415PBF 品牌：INTERNATIONAL 备注：这里有IRF3415多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3415批发/采购报价，IRF3415行情走势销售排行榜，IRF3415报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3415

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415

N-Channel MOSFET Transistor

文件：338.14 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF3415

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF3415L

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415L

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415SPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRLPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415L

Isc N-Channel MOSFET Transistor

文件：299.81 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415PBF_15

ADVANCED PROCESS TECHNOLOGY

文件：208.79 Kbytes Page：9 Pages

IRF

IRF3415S

Isc N-Channel MOSFET Transistor

文件：188.54 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415S

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Infineon

英飞凌

IRF3415SPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：1.07203 Mbytes Page：11 Pages

IRF

3415A

P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

3415

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco

3415

-4.0A竊?20V P-CHANNEL MOSFET

文件：122 Kbytes Page：5 Pages

KIA

可易亚半导体

3415

12V P-channel MOS FET

文件：165.46 Kbytes Page：2 Pages

FUMAN

富满微

3415B

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco

IRF3415产品属性

  • 类型

    描述

  • 型号

    IRF3415

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRF3415供应商更多...

更新时间：2025-9-26 12:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市德正通电子有限公司
IRF3415PBF
International Rectifier (Infin
23+
3000
原装正品现货,德为本,正为先,通天下!
询价
深圳市盈慧通电子有限公司
IRF3415PBF
IR
2511
TO-220
12800
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价
询价
深圳市佳鑫美电子科技有限公司
IRF3415STRL
IR
25+
SOT-263
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
深圳市冠亿通科技有限公司
IRF3415PBFMOS(场效应管)
INFINEON/英飞凌
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
询价
深圳市拓亿芯电子有限公司
IRF3415S
IR
23+
TO-263
30000
代理全新原装现货,价格优势
询价
深圳市正迈科技有限公司
IRF3415STRLPBF
INFINEON
23+
原封 □
21500
INFINEON优势 /原装现货长期供应现货支持
询价
深圳市欧立现代科技有限公司
IRF3415S
ir
24+
N/A
6980
原装现货,可开13%税票
询价
深圳市润联芯城科技有限公司
IRF3415STRLPBF
INFINEON/英飞凌
22+
TO-263
25800
原装正品支持实单
询价
深圳市中联芯电子有限公司
IRF3415PBF
INFINEON
23+
TO-220
20000
市场最低 原装现货 假一罚百 可开原型号
询价
上海意淼电子科技有限公司
IRF3415PBF
INFINEON
23+
K-B
1000
只有原装,请来电咨询
询价

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