IRF3415价格
参考价格:¥4.1392
型号:IRF3415PBF 品牌:INTERNATIONAL 备注:这里有IRF3415多少钱,2026年最近7天走势,今日出价,今日竞价,IRF3415批发/采购报价,IRF3415行情走势销售排行榜,IRF3415报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3415 | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | ||
IRF3415 | 采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET \n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度; | INFINEON 英飞凌 | ||
IRF3415 | N-Channel MOSFET Transistor 文件:338.14 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF3415 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | ||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package \n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度; | INFINEON 英飞凌 | |||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | |||
Isc N-Channel MOSFET Transistor 文件:299.81 Kbytes Page:2 Pages | ISC 无锡固电 | |||
ADVANCED PROCESS TECHNOLOGY 文件:208.79 Kbytes Page:9 Pages | IRF | |||
丝印代码:D2PAK;Isc N-Channel MOSFET Transistor 文件:188.54 Kbytes Page:2 Pages | ISC 无锡固电 | |||
ADVANCED PROCESS TECHNOLOGY 文件:1.07203 Mbytes Page:11 Pages | IRF | |||
Dual MOSFET Driver with Bootstrapping GENERAL DESCRIPTION The ADP3415 is a dual MOSFET driver optimized for driving two N-channel FETs that are the two switches in the nonisolated synchronous buck power converter topology. Each driver size is optimized for performance in notebook PC regulators for CPUs in the 20 A range. The high-sid | AD 亚德诺 | |||
MSP 34x5G Multistandard Sound Processor Family [Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
Multistandard Sound Processors 文件:472.95 Kbytes Page:71 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
IRF3415产品属性
- 类型
描述
- OPN:
IRF3415PBF
- Qualification:
Non-Automotive
- Package name:
TO220
- VDS max:
150 V
- RDS (on) @10V max:
42 mΩ
- ID @25°C max:
43 A
- QG typ @10V:
133.3 nC
- Polarity:
N
- VGS(th) min:
2 V
- VGS(th) max:
4 V
- VGS(th):
3 V
- Technology:
IR MOSFET™
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+ |
5 |
公司优势库存 热卖中!! |
||||
IR |
25+ |
TO-220 |
12363 |
保证进口原装现货假一赔十 |
|||
IR |
2023+ |
原厂封装 |
50000 |
原装现货 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IR |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
24+ |
TO-220 |
66800 |
原厂授权一级代理,专注汽车、医疗、工业、新能源! |
|||
IR |
17+ |
TO-220 |
330 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
INFINEON/英飞凌 |
25+ |
TO-220 |
5000 |
全新原装正品支持含税 |
IRF3415规格书下载地址
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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