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IRF3415价格
参考价格：￥4.1392
型号：IRF3415PBF 品牌：INTERNATIONAL 备注：这里有IRF3415多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3415批发/采购报价，IRF3415行情走势销售排行榜，IRF3415报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3415 | Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF |   | |
IRF3415 | N-Channel MOSFET Transistor 文件：338.14 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRF3415 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | |
IRF3415 | 采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET | Infineon 英飞凌 | | |
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：299.81 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：208.79 Kbytes Page：9 Pages | IRF | | ||
Isc N-Channel MOSFET Transistor 文件：188.54 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Infineon 英飞凌 | | ||
ADVANCED PROCESS TECHNOLOGY 文件：1.07203 Mbytes Page：11 Pages | IRF | | ||
P-Channel Enhancement Mode Power MOSFET Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters | GOFORD 谷峰半导体 | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | | ||
-4.0A竊?20V P-CHANNEL MOSFET 文件：122 Kbytes Page：5 Pages | KIA 可易亚半导体 | | ||
12V P-channel MOS FET 文件：165.46 Kbytes Page：2 Pages | FUMAN 富满微 | | ||
Heyco® PG and Metric Threaded Plugs 文件：114.81 Kbytes Page：1 Pages | Heyco | |
IRF3415产品属性
- 类型
描述
- 型号
IRF3415
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON/英飞凌 |
25+ |
TO263 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+ |
TO-220 |
12363 |
保证进口原装现货假一赔十 |
|||
24+ |
TO-220 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
||||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
INFINEON/英飞凌 |
20+ |
TO-263 |
46 |
||||
INTERNATIONALRECTIFIER |
25+ |
NA |
880000 |
明嘉莱只做原装正品现货 |
|||
IOR |
25+23+ |
TO-263 |
24872 |
绝对原装正品全新进口深圳现货 |
|||
IR |
22+ |
D2PAK |
8000 |
原装正品支持实单 |
IRF3415芯片相关品牌
IRF3415规格书下载地址
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IRF3415数据表相关新闻
IRF520NPBF
全新原装现货 支持第三方机构验证
2022-10-19IRF3710STRLPBF 原装正品
INFINEON/英飞凌 现货100K
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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