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位置：首页 > IC中文资料第2127页 > IRF3415

IRF3415价格

参考价格：￥4.1392

型号：IRF3415PBF 品牌：INTERNATIONAL 备注：这里有IRF3415多少钱，2026年最近7天走势，今日出价，今日竞价，IRF3415批发/采购报价，IRF3415行情走势销售排行榜，IRF3415报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3415

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415

N-Channel MOSFET Transistor

文件：338.14 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3415

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

Infineon

英飞凌

IRF3415L

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415L

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415PBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415S

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415SPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRLPBF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415STRR

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415L

Isc N-Channel MOSFET Transistor

文件：299.81 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415PBF_15

ADVANCED PROCESS TECHNOLOGY

文件：208.79 Kbytes Page：9 Pages

IRF

IRF3415S

Isc N-Channel MOSFET Transistor

文件：188.54 Kbytes Page：2 Pages

ISC

无锡固电

IRF3415S

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Infineon

英飞凌

IRF3415SPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：1.07203 Mbytes Page：11 Pages

IRF

3415A

P-Channel Enhancement Mode Power MOSFET

Description The 3415A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

3415

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco

3415

-4.0A竊?20V P-CHANNEL MOSFET

文件：122 Kbytes Page：5 Pages

KIA

可易亚半导体

3415

12V P-channel MOS FET

文件：165.46 Kbytes Page：2 Pages

FUMAN

富满微

3415B

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Heyco

IRF3415产品属性

  • 类型

    描述

  • 型号

    IRF3415

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRF3415供应商更多...

更新时间：2026-1-1 20:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
IRF3415PBF
IR
24+
TO-220
12363
保证进口原装现货假一赔十
询价
深圳市得捷芯城科技有限公司
IRF3415
IR
24+
NA/
22800
优势代理渠道,原装正品,可全系列订货开增值税票
询价
深圳市明嘉莱科技有限公司
IRF3415
IR
24+
TO-220
880000
明嘉莱只做原装正品现货
询价
深圳市华睿芯科技有限公司
IRF3415
24+
TO-220
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
深圳市振宏微科技有限公司
IRF3415
IR
23+
TO-220
3000
专做原装正品,假一罚百!
询价
深圳市恒达亿科技有限公司
IRF3415
ir
25+
TO220
4500
全新原装、诚信经营、公司现货销售
询价
深圳市毅创腾电子科技有限公司
IRF3415
ir
23+
TO220
2800
绝对全新原装!现货!特价!请放心订购!
询价
标准国际(香港)有限公司
IRF3415
IR
25+
5
公司优势库存 热卖中!!
询价
齐创科技(上海,北京,青岛)有限公司
IRF3415
IR
23+
TO-263
5000
原装正品,假一罚十
询价
深圳诚思涵科技有限公司
IRF3415
IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
询价

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