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IRF3415价格

参考价格:¥4.1392

型号:IRF3415PBF 品牌:INTERNATIONAL 备注:这里有IRF3415多少钱,2026年最近7天走势,今日出价,今日竞价,IRF3415批发/采购报价,IRF3415行情走势销售排行榜,IRF3415报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3415

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

IRF3415

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

IRF3415

N-Channel MOSFET Transistor

文件:338.14 Kbytes Page:2 Pages

ISC

无锡固电

IRF3415

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

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未分类制造商

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

INFINEON

英飞凌

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Isc N-Channel MOSFET Transistor

文件:299.81 Kbytes Page:2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件:208.79 Kbytes Page:9 Pages

IRF

丝印代码:D2PAK;Isc N-Channel MOSFET Transistor

文件:188.54 Kbytes Page:2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件:1.07203 Mbytes Page:11 Pages

IRF

Dual MOSFET Driver with Bootstrapping

GENERAL DESCRIPTION The ADP3415 is a dual MOSFET driver optimized for driving two N-channel FETs that are the two switches in the nonisolated synchronous buck power converter topology. Each driver size is optimized for performance in notebook PC regulators for CPUs in the 20 A range. The high-sid

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亚德诺

MSP 34x5G Multistandard Sound Processor Family

[Micronas] Introduction The MSP 34x5G family of single-chip Multistandard Sound Processors covers the sound processing of all analog TV standards worldwide, as well as the NICAM digital sound standards. The full TV sound processing, starting with analog sound IF signal-in, down to processed anal

ETCList of Unclassifed Manufacturers

未分类制造商

Multistandard Sound Processors

文件:472.95 Kbytes Page:71 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3415产品属性

  • 类型

    描述

  • OPN:

    IRF3415PBF

  • Qualification:

    Non-Automotive

  • Package name:

    TO220

  • VDS max:

    150 V

  • RDS (on) @10V max:

    42 mΩ

  • ID @25°C max:

    43 A

  • QG typ @10V:

    133.3 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • VGS(th):

    3 V

  • Technology:

    IR MOSFET™

更新时间:2026-5-15 15:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
25+
5
公司优势库存 热卖中!!
IR
25+
TO-220
12363
保证进口原装现货假一赔十
IR
2023+
原厂封装
50000
原装现货
IR
23+
TO-220
7000
IR(国际整流器)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
IR
2447
TO-220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
IR
24+
TO-220
66800
原厂授权一级代理,专注汽车、医疗、工业、新能源!
IR
17+
TO-220
330
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
26+
原厂原封装
86720
全新原装正品价格最实惠 假一赔百
INFINEON/英飞凌
25+
TO-220
5000
全新原装正品支持含税

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