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IRF3415STRR中文资料
IRF3415STRR数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF3415L) is available for low profile applications
● Advanced Process Technology
● Surface Mount (IRF3415S)
● Low-profile through-hole (IRF3415L)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
IRF3415STRR产品属性
- 类型
描述
- 型号
IRF3415STRR
- 功能描述
MOSFET 150V 1 N-CH HEXFET 42mOhms 133.3nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INTERNATIONA |
05+ |
原厂原装 |
6824 |
只做全新原装真实现货供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
INFINEON |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
23+ |
D2PAK |
6000 |
原装正品,支持实单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-263 |
50345 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
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