N-Channel Power MOSFETs, 10A, 350V/400V

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

isc N-Channel MOSFET Transistor

文件：47.83 Kbytes Page：2 Pages

N-Channel Power MOSFETs

文件：345.62 Kbytes Page：5 Pages

Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3

采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

\n优势:\n• 符合 RoHS\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel 100-V (D-S) MOSFET

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N-Channel MOSFET Transistor

文件：338.14 Kbytes Page：2 Pages

SEMICONDUCTORS

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Isc N-Channel MOSFET Transistor

文件：299.81 Kbytes Page：2 Pages

ADVANCED PROCESS TECHNOLOGY

文件：208.79 Kbytes Page：9 Pages

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：188.54 Kbytes Page：2 Pages

ADVANCED PROCESS TECHNOLOGY

文件：1.07203 Mbytes Page：11 Pages

0.5 AMPERE POWER TRANSISTORS NPN SILICON 150-200 VOLTS 20 WATTS

Plastic NPN Silicon Medium-Power Transistors . . . useful for medium voltage applications requiring high fT such as converters and extended range amplifiers.

3-Terminal Positive Voltage Regulators

文件：310.99 Kbytes Page：11 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages

Single with Shutdown/Dual/Quad General Purpose, 2.7V, Rail-to-Rail Output, 125째C, Operational Amplifiers

文件：694.92 Kbytes Page：17 Pages