N-Channel Power MOSFETs, 10A, 350V/400V

N-CHANNEL POWER MOSFETS

N-Channel Power MOSFETs

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFETs

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Trans MOSFET N-CH 350V 10A 3-Pin(2+Tab) TO-3

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

Advanced Process Technology

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

N-Channel 100-V (D-S) MOSFET

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N-Channel MOSFET Transistor

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采用 TO-220 封装的 150V 单 N 沟道功率 MOSFET

SEMICONDUCTORS

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Isc N-Channel MOSFET Transistor

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ADVANCED PROCESS TECHNOLOGY

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Isc N-Channel MOSFET Transistor

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150V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

ADVANCED PROCESS TECHNOLOGY

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WASHERS AND NUTS

[KEYSTONE] FIBRE SHOULDER WASHERS HEX MACHINE NUTS NYLON SHOULDER WASHER/BUSHINGS BLIND CAPTIVE NUTS - PRESS FIT METRIC MACHINE NUTS

Redline VDE Pliers

Range Description A range of VDE approved Professional Electricians Pliers and cutters Range Features  Certified & approved by the world renowned VDE institute of Germany  Each tool is tested to 10,000v for the complete assurance of safety when working on live equipment up to 1000v AC  G

Card Edge Connector | Green | 0.100 (2.54mm) Pitch | 0.140 (3.56mm) Row Spacing | 0.437 (11.10mm) Insulator Height

Features .100 (2.54mm) Contact Spacing x .140 (3.56mm) Row Spacing Accepts .062 (1.57mm) Nominal Thickness P.C. Board Low Profile Insulator Body, .437 (11.10mm) Contact Termination Options include P.C. Tail, Wire Hole and Extender Board Bends Single or Dual Row Configurations Varie

3.0 Amp Output Current IGBT Gate Drive Optocoupler with Rail-to-Rail

Description The ACPL-P341/W341 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power output stage. This optocoupler is ideally suited for driving power IGBTs and MOSFETs used in motor control inverter applications. Features • 3.0 A maximum peak output

TREK 341B

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