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位置：首页 > IC中文资料 > IRF320

IRF320价格

参考价格：￥7.5676

型号：IRF3205LPBF 品牌：International 备注：这里有IRF320多少钱，2026年最近7天走势，今日出价，今日竞价，IRF320批发/采购报价，IRF320行情走势销售排行榜，IRF320报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF320

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

FAIRCHILD

仙童半导体

IRF320

N-CHANNEL POWER MOSFETS

SAMSUNG

三星

IRF320

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

INTERSIL

IRF320

Static Drain-Source On-Resistance

文件：48.23 Kbytes Page：2 Pages

ISC

无锡固电

IRF320

N-Channel Power MOSFETs

文件：333.66 Kbytes Page：6 Pages

ARTSCHIP

IRF320

2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs

文件：137.47 Kbytes Page：3 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF320

N-CHANNEL POWER MOSFETS

ONSEMI

安森美半导体

IRF320-323

N-Channel Power MOSFETs, 3.0 A, 350-400 V

Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high voltage, high spaed applications, such as off-line switching power supplies, AC and DC motor controls, relay and solenoid drivers and drivers and other pulse circuits. • Low RDs(on) • VGS

FAIRCHILD

仙童半导体

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205

采用 TO-220 封装的 55V 单 N 沟道功率 MOSFET

\n优势:\n• 低 RDS(on)\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度\n \n  ;

INFINEON

英飞凌

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205PBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205PBF.

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205S

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205SPBF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

IRF3205VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF320LSPBF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

IRF3202SPBF

HEXFET Power MOSFET

文件：234.38 Kbytes Page：9 Pages

IRF

IRF320-323

N-Channel Power MOSFETs, 3.0 A, 350-400 V

ONSEMI

安森美半导体

IRF3205

N-Channel Power MOSFET

文件：622 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3205

HEXFET Power MOSFET

文件：598.69 Kbytes Page：7 Pages

ARTSCHIP

IRF3205

N-Channel Trench Process Power MOSFET Transistor

文件：970.8 Kbytes Page：5 Pages

THINKISEMI

思祁半导体

IRF3205

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205

isc N-Channel Mosfet Transistor

文件：139.86 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3205_18

N-Channel MOSFET Transistor

文件：338.88 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205DD

N -Channel Power MOSFET (55V/110A)

文件：543.27 Kbytes Page：2 Pages

FS

IRF3205L

Advanced Process Technology

文件：1.17944 Mbytes Page：10 Pages

KERSEMI

IRF3205L

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205L

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205PBF

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205PBF_15

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205S

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205S

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205S

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：266.94 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205S

Advanced Process Technology

文件：1.09156 Mbytes Page：10 Pages

KERSEMI

IRF3205S_02

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205SPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205SPBF_15

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：266.96 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205STRR

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205Z

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205Z

N-Channel MOSFET Transistor

文件：338.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205ZL

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF_15

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：300.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205ZS

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZSPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF320产品属性

  • 类型

    描述

  • OPN：

    IRF3205PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    55 V

  • RDS (on) @10V max：

    8 mΩ

  • ID @25°C max：

    110 A

  • QG typ @10V：

    97.3 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF320供应商更多...

更新时间：2026-5-15 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市赛特兴科技有限公司
IRF3205PBF
INFINEON
23+
TO-220
7492
正规渠道,只有原装!
询价
深圳市毅创腾电子科技有限公司
IRF3205
IR
TO-220
3200
专业分销全系列产品!绝对原装正品!量大可订!价格优
询价
深圳市金华微盛电子有限公司
IRF3205
FSC
19+
TO-220
53800
询价
深圳市明盛嘉电子科技有限公司
IRF3205PBF
INFINEON/英飞凌
26+
TO-220
23680
全新原装,假一赔十
询价
深圳市凌旭科技有限公司
IRF3205PBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
深圳市富利微电子科技有限公司
IRF3205ZPBF
IR
25+
TO-220
7500
保证进口原装现货假一赔十
询价
深圳市昂芯微科技有限公司
IRF3205STRLPBF
Infineon
23+
N/A
10000
原装现货热卖库存
询价
深圳市得捷芯城科技有限公司
IRF3205PBF
Infineon(英飞凌)
25+
TO-220(TO-220-3)
7589
全新原装现货,支持排单订货,可含税开票
询价
中天科工半导体（深圳）有限公司
IRF3205PBF-IR-CN
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF3205PBF-IR-CN即刻询购立享优惠#长期有货
询价
深圳市卓越微芯电子有限公司
IRF3205STRLPBF
IR
25+
TO-263
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
询价

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IRF320规格书下载地址

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