IRF3205价格

参考价格:¥7.5676

型号:IRF3205LPBF 品牌:International 备注:这里有IRF3205多少钱,2025年最近7天走势,今日出价,今日竞价,IRF3205批发/采购报价,IRF3205行情走势销售排行榜,IRF3205报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205

isc N-Channel Mosfet Transistor

文件:139.86 Kbytes Page:2 Pages

ISC

无锡固电

IRF3205

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

IRF3205

HEXFET Power MOSFET

文件:598.69 Kbytes Page:7 Pages

ARTSCHIP

IRF3205

N-Channel Trench Process Power MOSFET Transistor

文件:970.8 Kbytes Page:5 Pages

THINKISEMI

思祁半导体

IRF3205

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

IRF3205

N-Channel Power MOSFET

文件:622 Kbytes Page:7 Pages

NELLSEMI

尼尔半导体

IRF3205

N-Channel Trench Process Power MOSFET Transistor

THINKISEMI

思祁半导体

IRF3205

MOSFET/场效应管

FOSHAN

蓝箭电子

IRF3205

55V N-Channel Power MOSFET

ETC

知名厂家

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

N-Channel MOSFET Transistor

文件:338.88 Kbytes Page:2 Pages

ISC

无锡固电

N -Channel Power MOSFET (55V/110A)

文件:543.27 Kbytes Page:2 Pages

FS

Advanced Process Technology

文件:1.17944 Mbytes Page:10 Pages

KERSEMI

Advanced Process Technology

文件:618.88 Kbytes Page:11 Pages

IRF

HEXFET Power MOSFET

文件:609.74 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:221.54 Kbytes Page:8 Pages

IRF

Advanced Process Technology

文件:221.54 Kbytes Page:8 Pages

IRF

isc N-Channel MOSFET Transistor

文件:266.94 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET Power MOSFET

文件:609.74 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:618.88 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:1.09156 Mbytes Page:10 Pages

KERSEMI

HEXFET Power MOSFET

文件:609.74 Kbytes Page:10 Pages

IRF

Advanced Process Technology

文件:286.48 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:286.48 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:286.48 Kbytes Page:11 Pages

IRF

isc N-Channel MOSFET Transistor

文件:266.96 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology

文件:618.88 Kbytes Page:11 Pages

IRF

N-Channel MOSFET Transistor

文件:338.76 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:300.06 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

ETCList of Unclassifed Manufacturers

未分类制造商

FL MC 2000E (SM40) LC

文件:384.74 Kbytes Page:8 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

WASHERS

文件:68.27 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HF-band Fan-Out

文件:384.69 Kbytes Page:1 Pages

DOW-KEY

Heyco® Original Series-35 Liquid Tight Cordgrips

文件:264.32 Kbytes Page:1 Pages

Heyco

IRF3205产品属性

  • 类型

    描述

  • 型号

    IRF3205

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

更新时间:2025-9-24 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
Infineon(英飞凌)
24+
TO2633
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
INFINEON
23+
K-B
118040
只有原装,请来电咨询
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON/英飞凌
23+
NA
6800
原装正品,力挺实单
INFINEON/英飞凌
22+
100000
代理渠道/只做原装/可含税
IR
25+
TO262
54648
百分百原装现货 实单必成 欢迎询价
IR
三年内
1983
只做原装正品
INF
24+
SMD
800
全新正品现货供应特价库存
IR
24+
TO-220
7500
保证进口原装现货假一赔十

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