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位置：首页 > IC中文资料第280页 > IRF3205

IRF3205价格

参考价格：￥7.5676

型号：IRF3205LPBF 品牌：International 备注：这里有IRF3205多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3205批发/采购报价，IRF3205行情走势销售排行榜，IRF3205报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205

N-Channel Power MOSFET

文件：622 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3205

isc N-Channel Mosfet Transistor

文件：139.86 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205

N-Channel Trench Process Power MOSFET Transistor

文件：970.8 Kbytes Page：5 Pages

THINKISEMI

思祁半导体

IRF3205

HEXFET Power MOSFET

文件：598.69 Kbytes Page：7 Pages

ARTSCHIP

IRF3205

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3205

N-Channel Trench Process Power MOSFET Transistor

THINKISEMI

思祁半导体

IRF3205

MOSFET/场效应管

FOSHAN

蓝箭电子

IRF3205

55V N-Channel Power MOSFET

ETC

知名厂家

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205PBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205PBF.

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205S

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205SPBF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

IRF3205VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205_18

N-Channel MOSFET Transistor

文件：338.88 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205DD

N -Channel Power MOSFET (55V/110A)

文件：543.27 Kbytes Page：2 Pages

FS

IRF3205L

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205L

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205L

Advanced Process Technology

文件：1.17944 Mbytes Page：10 Pages

KERSEMI

IRF3205PBF

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205PBF_15

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205S

Advanced Process Technology

文件：1.09156 Mbytes Page：10 Pages

KERSEMI

IRF3205S

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205S

isc N-Channel MOSFET Transistor

文件：266.94 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205S

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205S_02

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205SPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205SPBF_15

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

isc N-Channel MOSFET Transistor

文件：266.96 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205STRR

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205Z

N-Channel MOSFET Transistor

文件：338.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205Z

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZL

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF_15

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZS

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZS

Isc N-Channel MOSFET Transistor

文件：300.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205ZSPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZSTRLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

3205

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

ETCList of Unclassifed Manufacturers

未分类制造商

3205

Heyco® Original Series-35 Liquid Tight Cordgrips

文件：264.32 Kbytes Page：1 Pages

Heyco

3205

WASHERS

文件：68.27 Kbytes Page：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3205

HF-band Fan-Out

文件：384.69 Kbytes Page：1 Pages

DOW-KEY

3205

FL MC 2000E (SM40) LC

文件：384.74 Kbytes Page：8 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

IRF3205产品属性

  • 类型

    描述

  • 型号

    IRF3205

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

IRF3205供应商更多...

更新时间：2025-11-18 3:27:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市英卓尔科技有限公司
IRF3205
ST
20+
原装模块
368
样品可出,原装现货
询价
深圳市高捷芯城科技有限公司
IRF3205ZSTRLPBF
Infineon(英飞凌)
24+
TO2633
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
深圳市得捷芯城科技有限公司
IRF3205N
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
上海意淼电子科技有限公司
IRF3205PBF
INFINEON
23+
K-B
118040
只有原装,请来电咨询
询价
深圳市纳艾斯科技有限公司
IRF3205PBF
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
询价
深圳市粤骏腾电子科技有限公司
IRF3205
24+
400
大批量供应优势库存热卖
询价
深圳市金芯世纪电子有限公司
IRF3205STRLPBF
INFINEON/英飞凌
22+
100000
代理渠道/只做原装/可含税
询价
深圳市科芯源微电子有限公司
IRF3205ZLPBF
IR
25+
TO262
54648
百分百原装现货 实单必成 欢迎询价
询价
深圳市华睿芯科技有限公司
IRF3205S
IR
24+
TO-263
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
中天科工半导体（深圳）有限公司
IRF3205PBF-IR-CN
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF3205PBF-IR-CN即刻询购立享优惠#长期有货
询价

IRF3205芯片相关品牌

IRF3205规格书下载地址

IRF3205参数引脚图相关

IRF3205数据表相关新闻

DdatasheetPDF页码索引

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