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IRF3205价格
参考价格:¥7.5676
型号:IRF3205LPBF 品牌:International 备注:这里有IRF3205多少钱,2025年最近7天走势,今日出价,今日竞价,IRF3205批发/采购报价,IRF3205行情走势销售排行榜,IRF3205报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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IRF3205 | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the | IRF | ||
IRF3205 | Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design | IRF | ||
IRF3205 | isc N-Channel Mosfet Transistor 文件:139.86 Kbytes Page:2 Pages | ISC 无锡固电 | ||
IRF3205 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | ||
IRF3205 | HEXFET Power MOSFET 文件:598.69 Kbytes Page:7 Pages | ARTSCHIP | ||
IRF3205 | N-Channel Trench Process Power MOSFET Transistor 文件:970.8 Kbytes Page:5 Pages | THINKISEMI 思祁半导体 | ||
IRF3205 | Advanced Process Technology Ultra Low On-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI | ||
IRF3205 | N-Channel Power MOSFET 文件:622 Kbytes Page:7 Pages | NELLSEMI 尼尔半导体 | ||
IRF3205 | N-Channel Trench Process Power MOSFET Transistor | THINKISEMI 思祁半导体 | ||
IRF3205 | MOSFET/场效应管 | FOSHAN 蓝箭电子 | ||
IRF3205 | 55V N-Channel Power MOSFET | ETC 知名厂家 | ETC | |
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design | IRF | |||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | |||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the | IRF | |||
N-Ch 60V Fast Switching MOSFETs Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology | EVVOSEMI 翊欧 | |||
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?? VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design | IRF | |||
HEXFET짰 Power MOSFET VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE | IRF | |||
HEXFET Power MOSFET Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro | IRF | |||
N-Channel MOSFET Transistor 文件:338.88 Kbytes Page:2 Pages | ISC 无锡固电 | |||
N -Channel Power MOSFET (55V/110A) 文件:543.27 Kbytes Page:2 Pages | FS | |||
Advanced Process Technology 文件:1.17944 Mbytes Page:10 Pages | KERSEMI | |||
Advanced Process Technology 文件:618.88 Kbytes Page:11 Pages | IRF | |||
HEXFET Power MOSFET 文件:609.74 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:221.54 Kbytes Page:8 Pages | IRF | |||
Advanced Process Technology 文件:221.54 Kbytes Page:8 Pages | IRF | |||
isc N-Channel MOSFET Transistor 文件:266.94 Kbytes Page:2 Pages | ISC 无锡固电 | |||
HEXFET Power MOSFET 文件:609.74 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:618.88 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:1.09156 Mbytes Page:10 Pages | KERSEMI | |||
HEXFET Power MOSFET 文件:609.74 Kbytes Page:10 Pages | IRF | |||
Advanced Process Technology 文件:286.48 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:286.48 Kbytes Page:11 Pages | IRF | |||
Advanced Process Technology 文件:286.48 Kbytes Page:11 Pages | IRF | |||
isc N-Channel MOSFET Transistor 文件:266.96 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Advanced Process Technology 文件:618.88 Kbytes Page:11 Pages | IRF | |||
N-Channel MOSFET Transistor 文件:338.76 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Advanced Process Technology Ultra Low On-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI | |||
Advanced Process Technology Ultra Low On-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
Isc N-Channel MOSFET Transistor 文件:300.06 Kbytes Page:2 Pages | ISC 无锡固电 | |||
Advanced Process Technology Ultra Low On-Resistance 文件:5.0983 Mbytes Page:12 Pages | KERSEMI | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
Advanced Process Technology 文件:385.59 Kbytes Page:12 Pages | IRF | |||
FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
FL MC 2000E (SM40) LC 文件:384.74 Kbytes Page:8 Pages | PhoenixPHOENIX CONTACT 菲尼克斯德国菲尼克斯电气集团 | |||
WASHERS 文件:68.27 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | |||
HF-band Fan-Out 文件:384.69 Kbytes Page:1 Pages | DOW-KEY | |||
Heyco® Original Series-35 Liquid Tight Cordgrips 文件:264.32 Kbytes Page:1 Pages | Heyco |
IRF3205产品属性
- 类型
描述
- 型号
IRF3205
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220AB
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
Infineon(英飞凌) |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
INFINEON |
23+ |
K-B |
118040 |
只有原装,请来电咨询 |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
23+ |
NA |
6800 |
原装正品,力挺实单 |
|||
INFINEON/英飞凌 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
25+ |
TO262 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
三年内 |
1983 |
只做原装正品 |
||||
INF |
24+ |
SMD |
800 |
全新正品现货供应特价库存 |
|||
IR |
24+ |
TO-220 |
7500 |
保证进口原装现货假一赔十 |
IRF3205芯片相关品牌
IRF3205规格书下载地址
IRF3205参数引脚图相关
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IRF3205数据表相关新闻
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