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IRF3205价格
参考价格：￥7.5676
型号：IRF3205LPBF 品牌：International 备注：这里有IRF3205多少钱，2025年最近7天走势，今日出价，今日竞价，IRF3205批发/采购报价，IRF3205行情走势销售排行榜，IRF3205报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF3205 | PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe | IRF International Rectifier |  |   |
IRF3205 | PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRF International Rectifier | | |
IRF3205 | N-ChannelPowerMOSFET 文件：622 Kbytes Page：7 Pages | NELLSEMINell Semiconductor Co., Ltd 尼尔半导体尼尔半导体股份有限公司 |  | |
IRF3205 | iscN-ChannelMosfetTransistor 文件：139.86 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IRF3205 | AdvancedProcessTechnologyUltraLowOn-Resistance 文件：5.0983 Mbytes Page：12 Pages | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRF3205 | N-ChannelTrenchProcessPowerMOSFETTransistor 文件：970.8 Kbytes Page：5 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思祁半导体思祁半导体有限公司 |  | |
IRF3205 | HEXFETPowerMOSFET 文件：598.69 Kbytes Page：7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
IRF3205 | SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 |  | |
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,providesthe | IRF International Rectifier | | | |
N-Ch60VFastSwitchingMOSFETs SuperLowGateCharge 100EASGuaranteed GreenDeviceAvailable ExcellentCdV/dteffectdecline AdvancedhighcelldensityTrenchtechnology | EVVOSEMIEVER SEMICONDUCTOR CO.,LIMITED 翊欧翊欧半导体 |  | | |
PowerMOSFET(Vdss=55V,Rds(on)=8.0mohm,Id=110A?? VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesign | IRF International Rectifier | | | |
HEXFET짰PowerMOSFET VDSS=55V RDS(on)=8.0mΩ ID=110A Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFE | IRF International Rectifier | | | |
HEXFETPowerMOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRF International Rectifier | | | |
N-ChannelMOSFETTransistor 文件：338.88 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelPowerMOSFET(55V/110A) 文件：543.27 Kbytes Page：2 Pages | FS First Silicon Co., Ltd |  | | |
AdvancedProcessTechnology 文件：618.88 Kbytes Page：11 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：1.17944 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFETPowerMOSFET 文件：609.74 Kbytes Page：10 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：221.54 Kbytes Page：8 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：221.54 Kbytes Page：8 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：1.09156 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AdvancedProcessTechnology 文件：618.88 Kbytes Page：11 Pages | IRF International Rectifier | | | |
iscN-ChannelMOSFETTransistor 文件：266.94 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HEXFETPowerMOSFET 文件：609.74 Kbytes Page：10 Pages | IRF International Rectifier | | | |
HEXFETPowerMOSFET 文件：609.74 Kbytes Page：10 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：286.48 Kbytes Page：11 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：286.48 Kbytes Page：11 Pages | IRF International Rectifier | | | |
iscN-ChannelMOSFETTransistor 文件：266.96 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedProcessTechnology 文件：286.48 Kbytes Page：11 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：618.88 Kbytes Page：11 Pages | IRF International Rectifier | | | |
N-ChannelMOSFETTransistor 文件：338.76 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedProcessTechnologyUltraLowOn-Resistance 文件：5.0983 Mbytes Page：12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AdvancedProcessTechnologyUltraLowOn-Resistance 文件：5.0983 Mbytes Page：12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnologyUltraLowOn-Resistance 文件：5.0983 Mbytes Page：12 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IscN-ChannelMOSFETTransistor 文件：300.06 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
AdvancedProcessTechnology 文件：385.59 Kbytes Page：12 Pages | IRF International Rectifier | | | |
FHP3205isalow-voltagehigh-currentpowerMOSfieldeffecttransistor,widelyusedinpowerinverters Features 110A,55V,RDS(on)=8.0mΩfastswitching speed | ETCList of Unclassifed Manufacturers 未分类制造商 |  | | |
Heyco®OriginalSeries-35LiquidTightCordgrips 文件：264.32 Kbytes Page：1 Pages | HeycoHeyco. 海科 |  | | |
HF-bandFan-Out 文件：384.69 Kbytes Page：1 Pages | DOW-KEY Dow-Key Microwave Corporation |  | | |
FLMC2000E(SM40)LC 文件：384.74 Kbytes Page：8 Pages | PhoenixPHOENIX CONTACT 菲尼克斯电气德国菲尼克斯电气集团 |  | | |
WASHERS 文件：68.27 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | |
IRF3205产品属性
- 类型
描述
- 型号
IRF3205
- 制造商
International Rectifier
- 功能描述
TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220AB
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220 |
7500 |
保证进口原装现货假一赔十 |
|||
Infineon(英飞凌) |
24+ |
TO2633 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR(国际整流器) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
IR |
24+ |
TO-220 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
25+ |
TO262 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
22+ |
100000 |
代理渠道/只做原装/可含税 |
||||
IR |
24+ |
TO-263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
Infineon(英飞凌 |
2024+ |
TO-220-3 |
500000 |
诚信服务,绝对原装原盘 |
|||
INFINEON/英飞凌 |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
INFINEON/英飞凌 |
20+ |
TO-220 |
23000 |
IRF3205芯片相关品牌
IRF3205规格书下载地址
IRF3205参数引脚图相关
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IRF3205数据表相关新闻
IRF3205PBF
进口代理
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