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位置：首页 > IC中文资料 > IRF3205

IRF3205价格

参考价格：￥7.5676

型号：IRF3205LPBF 品牌：International 备注：这里有IRF3205多少钱，2026年最近7天走势，今日出价，今日竞价，IRF3205批发/采购报价，IRF3205行情走势销售排行榜，IRF3205报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3205

isc N-Channel Mosfet Transistor

文件：139.86 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205

HEXFET Power MOSFET

文件：598.69 Kbytes Page：7 Pages

ARTSCHIP

IRF3205

N-Channel Trench Process Power MOSFET Transistor

文件：970.8 Kbytes Page：5 Pages

THINKISEMI

思祁半导体

IRF3205

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205

N-Channel Power MOSFET

文件：622 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3205

N-Channel Trench Process Power MOSFET Transistor

THINKISEMI

思祁半导体

IRF3205

MOSFET/场效应管

FOSHAN

蓝箭电子

IRF3205

55V N-Channel Power MOSFET

MINOS

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205PBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205PBF.

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205S

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205SPBF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

IRF3205VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205_18

N-Channel MOSFET Transistor

文件：338.88 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205DD

N -Channel Power MOSFET (55V/110A)

文件：543.27 Kbytes Page：2 Pages

FS

IRF3205L

Advanced Process Technology

文件：1.17944 Mbytes Page：10 Pages

KERSEMI

IRF3205L

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205L

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205PBF

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205PBF_15

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205S

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：266.94 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205S

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205S

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205S

Advanced Process Technology

文件：1.09156 Mbytes Page：10 Pages

KERSEMI

IRF3205S_02

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205SPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205SPBF_15

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

文件：266.96 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205STRR

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205Z

N-Channel MOSFET Transistor

文件：338.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205Z

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZL

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF_15

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZS

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

文件：300.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205ZS

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZSPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZSTRLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

MSS3205

32 Voice ROM

Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep

MOSEL

茂矽电子

MSS3205

21/32/43/60 VOICE ROM

Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep

MOSEL

茂矽电子

S3205QA

21/32/43/60 VOICE ROM

Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep

MOSEL

茂矽电子

S3205QE

21/32/43/60 VOICE ROM

Description The MSS6605 is a single-chip CMOS VLSI ROM that can memorize voice up to 60 seconds using MOSEL qualified coding method (MPCM) at 5.8 KHz. Three addressing interfaces are provided: CPU mode, KEYBOARD mode and MATRIX mode for versatile applications. The voice content can be stored sep

MOSEL

茂矽电子

MDC3205

RELAY/SOLENOID DRIVER SILICON MONOLITHIC CIRCUIT BLOCK

文件：158.59 Kbytes Page：6 Pages

MOTOROLA

摩托罗拉

IRF3205产品属性

  • 类型

    描述

  • OPN：

    IRF3205PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    55 V

  • RDS (on) @10V max：

    8 mΩ

  • ID @25°C max：

    110 A

  • QG typ @10V：

    97.3 nC

  • Polarity：

    N

  • VGS(th) min：

    2 V

  • VGS(th) max：

    4 V

  • VGS(th)：

    3 V

  • Technology：

    IR MOSFET™

IRF3205供应商更多...

更新时间：2026-5-14 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市正纳电子有限公司
IRF3205ZPBF
INFINEON
22+
TO-220
34000
原装正品可支持验货,欢迎咨询
询价
深圳市赛特兴科技有限公司
IRF3205PBF
INFINEON
23+
TO-220
7492
正规渠道,只有原装!
询价
深圳市毅创腾电子科技有限公司
IRF3205
IR
TO-220
3200
专业分销全系列产品!绝对原装正品!量大可订!价格优
询价
深圳市富利微电子科技有限公司
IRF3205ZPBF
IR
25+
TO-220
7500
保证进口原装现货假一赔十
询价
深圳市昂芯微科技有限公司
IRF3205STRLPBF
Infineon
23+
N/A
10000
原装现货热卖库存
询价
深圳市金华微盛电子有限公司
IRF3205
FSC
19+
TO-220
53800
询价
深圳市明盛嘉电子科技有限公司
IRF3205PBF
INFINEON/英飞凌
26+
TO-220
23680
全新原装,假一赔十
询价
深圳市正迈科技有限公司
IRF3205PBF
IRINFINEON
23+
TO220
54750
原装进口IR系列MOS现货中长期供应QQ1304306553
询价
深圳市凌旭科技有限公司
IRF3205PBF
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
询价
中天科工半导体（深圳）有限公司
IRF3205PBF-IR-CN
INFINEON/英飞凌
25+
TO-220
32000
INFINEON/英飞凌全新特价IRF3205PBF-IR-CN即刻询购立享优惠#长期有货
询价

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