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位置：首页 > IC中文资料第280页 > IRF3205

IRF3205价格

参考价格：￥7.5676

型号：IRF3205LPBF 品牌：International 备注：这里有IRF3205多少钱，2026年最近7天走势，今日出价，今日竞价，IRF3205批发/采购报价，IRF3205行情走势销售排行榜，IRF3205报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205

N-Channel Power MOSFET

文件：622 Kbytes Page：7 Pages

NELLSEMI

尼尔半导体

IRF3205

isc N-Channel Mosfet Transistor

文件：139.86 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205

N-Channel Trench Process Power MOSFET Transistor

文件：970.8 Kbytes Page：5 Pages

THINKISEMI

思祁半导体

IRF3205

HEXFET Power MOSFET

文件：598.69 Kbytes Page：7 Pages

ARTSCHIP

IRF3205

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF3205

N-Channel Trench Process Power MOSFET Transistor

THINKISEMI

思祁半导体

IRF3205

MOSFET/场效应管

FOSHAN

蓝箭电子

IRF3205

55V N-Channel Power MOSFET

ETC

知名厂家

IRF3205L

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205PBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205PBF.

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the

IRF

IRF3205S

N-Ch 60V Fast Switching MOSFETs

Super Low Gate Charge 100 EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology

EVVOSEMI

翊欧

IRF3205S

Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A??

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A… Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design

IRF

IRF3205SPBF

HEXFET짰 Power MOSFET

VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

IRF

IRF3205VPBF

HEXFET Power MOSFET

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZL

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZLPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZS

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205ZSPBF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205_18

N-Channel MOSFET Transistor

文件：338.88 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205DD

N -Channel Power MOSFET (55V/110A)

文件：543.27 Kbytes Page：2 Pages

FS

IRF3205L

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205L

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205L

Advanced Process Technology

文件：1.17944 Mbytes Page：10 Pages

KERSEMI

IRF3205PBF

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205PBF_15

Advanced Process Technology

文件：221.54 Kbytes Page：8 Pages

IRF

IRF3205S

Advanced Process Technology

文件：1.09156 Mbytes Page：10 Pages

KERSEMI

IRF3205S

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205S

isc N-Channel MOSFET Transistor

文件：266.94 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205S

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205S_02

HEXFET Power MOSFET

文件：609.74 Kbytes Page：10 Pages

IRF

IRF3205SPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205SPBF_15

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

Advanced Process Technology

文件：286.48 Kbytes Page：11 Pages

IRF

IRF3205STRLPBF

isc N-Channel MOSFET Transistor

文件：266.96 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205STRR

Advanced Process Technology

文件：618.88 Kbytes Page：11 Pages

IRF

IRF3205Z

N-Channel MOSFET Transistor

文件：338.76 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205Z

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZL

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZPBF_15

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZS

Advanced Process Technology Ultra Low On-Resistance

文件：5.0983 Mbytes Page：12 Pages

KERSEMI

IRF3205ZS

Isc N-Channel MOSFET Transistor

文件：300.06 Kbytes Page：2 Pages

ISC

无锡固电

IRF3205ZSPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

IRF3205ZSTRLPBF

Advanced Process Technology

文件：385.59 Kbytes Page：12 Pages

IRF

3205

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

ETCList of Unclassifed Manufacturers

未分类制造商

3205

Heyco® Original Series-35 Liquid Tight Cordgrips

文件：264.32 Kbytes Page：1 Pages

Heyco

3205

WASHERS

文件：68.27 Kbytes Page：1 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

3205

HF-band Fan-Out

文件：384.69 Kbytes Page：1 Pages

DOW-KEY

3205

FL MC 2000E (SM40) LC

文件：384.74 Kbytes Page：8 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

IRF3205产品属性

  • 类型

    描述

  • 型号

    IRF3205

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 55V 110A 3PIN TO-220AB - Rail/Tube

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220AB

IRF3205供应商更多...

更新时间：2026-1-2 11:04:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市勤思达科技有限公司
IRF3205
IR
21+
TO-220/TO-263
50000
勤思达科技主营IR系列,全新原装正品,现货供应。
询价
深圳市赛特兴科技有限公司
IRF3205PBF
INFINEON
23+
TO-220
7492
正规渠道,只有原装!
询价
艾睿（深圳）半导体有限公司
IRF3205
IR
2447
TO220
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
深圳市莱克讯科技有限公司
IRF3205
IR
1923+
T0-220
5689
原装进口现货库存专业工厂研究所配单供货
询价
深圳市威尔健半导体有限公司
IRF3205
IR
23+
TO-220
50000
全新原装正品现货,支持订货
询价
深圳市星佑电子有限公司
IRF3205
IR
06+
TO-220
8000
自己公司全新库存绝对有货
询价
深圳市毅创腾电子科技有限公司
IRF3205
IR
TO-220
3200
专业分销全系列产品!绝对原装正品!量大可订!价格优
询价
深圳市金华微盛电子有限公司
IRF3205
FSC
19+
TO-220
53800
询价
深圳市英卓尔科技有限公司
IRF3205
IR台产
20+
TO-220
368
样品可出,原装现货
询价
深圳市壹芯创科技有限公司
IRF3205
IR
22+
TO-220
5000
全新原装现货!自家库存!
询价

IRF3205芯片相关品牌

IRF3205规格书下载地址

IRF3205参数引脚图相关

IRF3205数据表相关新闻

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