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VDSS= 55V RDS(on)= 8.0mΩ ID= 110A Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFE

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SWITCHMODE Power Rectifiers DPAK Surface Mount Package . . . designed for use as output rectifiers, free wheeling, protection and steering diodes in switching power supplies, inverters and other inductive switching circuits. These state–of–the–art devices have the following features: • Extremel

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文件：8.5059 Mbytes Page：79 Pages

Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages

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文件：210.19 Kbytes Page：8 Pages

Series 3-Terminal Negative Regulators

文件：268.43 Kbytes Page：12 Pages