IRF3205Z价格

参考价格:¥7.1364

型号:IRF3205ZLPBF 品牌:IR 备注:这里有IRF3205Z多少钱,2025年最近7天走势,今日出价,今日竞价,IRF3205Z批发/采购报价,IRF3205Z行情走势销售排行榜,IRF3205Z报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF3205Z

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRF3205Z

N-Channel MOSFET Transistor

文件:338.76 Kbytes Page:2 Pages

ISC

无锡固电

IRF3205Z

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

IRF3205Z

55V 单个 n 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:300.06 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Process Technology Ultra Low On-Resistance

文件:5.0983 Mbytes Page:12 Pages

KERSEMI

55V 单个 n 通道 HEXFET Power MOSFET, 采用 D2Pak 封装

Infineon

英飞凌

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

MOSFET N-CH 55V 75A D2PAK

VishayVishay Siliconix

威世科技

Advanced Process Technology

文件:385.59 Kbytes Page:12 Pages

IRF

FHP3205 is a low-voltage high-current power MOS field effect transistor,widely used in power inverters

Features 110A, 55V, RDS(on) = 8.0mΩ fast switching speed

ETCList of Unclassifed Manufacturers

未分类制造商

FL MC 2000E (SM40) LC

文件:384.74 Kbytes Page:8 Pages

PhoenixPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

WASHERS

文件:68.27 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

HF-band Fan-Out

文件:384.69 Kbytes Page:1 Pages

DOW-KEY

Heyco® Original Series-35 Liquid Tight Cordgrips

文件:264.32 Kbytes Page:1 Pages

Heyco

IRF3205Z产品属性

  • 类型

    描述

  • 型号

    IRF3205Z

  • 功能描述

    MOSFET N-CH 55V 75A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-24 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-220
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
INFINEON
100000
代理渠道/只做原装/可含税
IR
24+
TO-220
7500
保证进口原装现货假一赔十
Infineon Technologies
23+
原装
7000
MAXIMUM
23+
TO-263
15000
全新原装现货,价格优势
Infineon
23+
TO220
15500
英飞凌优势渠道全系列在售
IR
23+
TO-220
35890
IR
24+
TO-263
501272
免费送样原盒原包现货一手渠道联系
INFINEON
25+
TO-263
918000
明嘉莱只做原装正品现货
Infineon(英飞凌)
24+
TO-263-3
7906
原厂可订货,技术支持,直接渠道。可签保供合同

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