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IRF3205S中文资料
IRF3205S数据手册规格书PDF详情
VDSS= 55V
RDS(on)= 8.0mΩ
ID= 110A
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRF3205S产品属性
- 类型
描述
- 型号
IRF3205S
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-263 |
9443 |
保证进口原装现货假一赔十 |
|||
IR |
25+ |
TO-263 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
2020+ |
TO-263 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
Infineon |
23+ |
N/A |
10000 |
原装现货热卖库存 |
|||
INFINEON |
22+ |
D2PAK |
40000 |
原装正品可支持验货,欢迎咨询 |
|||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IRF3205STRLPBF即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO-220 |
15000 |
全新原装的现货 |
|||
IR |
15+ |
原厂原装 |
8800 |
进口原装现货假一赔十 |
|||
IR |
16+ |
TO-263 |
36000 |
原装正品,优势库存81 |
IRF3205STRRPBF 价格
参考价格:¥7.4948
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