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IRF22价格

参考价格：￥9.8960

型号：IRF2204LPBF 品牌：IR 备注：这里有IRF22多少钱，2025年最近7天走势，今日出价，今日竞价，IRF22批发/采购报价，IRF22行情走势销售排行榜，IRF22报价。

型号	功能描述	生产厂家企业	LOGO
IRF220	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	Samsung 三星	Samsung
IRF220	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	Intersil	Intersil
IRF220	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	Fairchild 仙童半导体	Fairchild
IRF220	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF220	High Speed Applications DESCRIPTION • Drain Current ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) • High Speed Applications APPLICATIONS • Switching power supplies	ISC 无锡固电	ISC
IRF220-223	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	Fairchild 仙童半导体	Fairchild
IRF2204	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp	IRF	IRF
IRF2204	N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤3.6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation	ISC 无锡固电	ISC
IRF2204L	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im	IRF	IRF
IRF2204LPBF	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features	IRF	IRF
IRF2204S	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im	IRF	IRF
IRF2204S	isc N-Channel MOSFET Transistor • FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a	ISC 无锡固电	ISC
IRF2204SPBF	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features	IRF	IRF
IRF221	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	Samsung 三星	Samsung
IRF221	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	Intersil	Intersil
IRF221	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	Fairchild 仙童半导体	Fairchild
IRF221	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF222	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	Samsung 三星	Samsung
IRF222	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	Fairchild 仙童半导体	Fairchild
IRF222	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	Intersil	Intersil
IRF222	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF223	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF223	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	Samsung 三星	Samsung
IRF223	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	Fairchild 仙童半导体	Fairchild
IRF223	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	Intersil	Intersil
IRF224	HEXFET TRANSISTORS 250V 1.1 ohm HEXFET	IRF	IRF
IRF225	HEXFET TRANSISTORS 250V 1.1 ohm HEXFET	IRF	IRF
IRF220	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
IRF220	N-Channel Power MOSFETs, 7A, 150-200V	ONSEMI 安森美半导体	ONSEMI
IRF220	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IRF220	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF2204	40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装	Infineon 英飞凌	Infineon
IRF2204PBF	Advanced Process Technology 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204PBF	HEXFET짰 Power MOSFET 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204PBF_15	Advanced Process Technology 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204SPBF	Advanced Process Technology 文件：329.36 Kbytes Page：11 Pages	IRF	IRF
IRF2204SPBF_15	Advanced Process Technology 文件：329.36 Kbytes Page：11 Pages	IRF	IRF
IRF221	High Speed Applications 文件：48.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF221	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF222	High Speed Applications 文件：48.2 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF222	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF223	High Speed Applications 文件：48.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF223	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF224	High Speed Applications 文件：48.33 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF225	High Speed Applications 文件：48.3 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF22N60	N-Channel Power MOSFET 文件：383.33 Kbytes Page：7 Pages	NELLSEMI 尼尔半导体	NELLSEMI

IRF22产品属性

类型
描述
型号
IRF22
制造商
International Rectifier
功能描述
Trans MOSFET N-CH 200V 5A 3-Pin(2+Tab) TO-3
制造商
International Rectifier
功能描述
TRANS MOSFET N-CH 200V 5A 2PIN TO-204AA - Bulk

IRF22供应商更多...

更新时间：2025-12-16 22:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
上海意淼电子科技有限公司	IRF2204PBF	INFINEON	23+	K-B	7000	只有原装,请来电咨询	询价
深圳市纳艾斯科技有限公司	IRF2204LPBF	IR	24+	TO-262	80000	只做自己库存全新原装进口正品假一赔百可开13%增	询价
深圳市富芯乐电子科技有限公司	IRF2204	IR	24+	TO-220	5000	只做原装正品现货欢迎来电查询15919825718	询价
中天科工半导体（深圳）有限公司	IRF2204SPBF	INFINEON/英飞凌	25+	TO-263	32360	INFINEON/英飞凌全新特价IRF2204SPBF即刻询购立享优惠#长期有货	询价
深圳市科恒伟业电子有限公司	IRF2204PBF	IR	2450+	TO-220	9850	只做原装正品现货或订货假一赔十!	询价
深圳市诺美思科技有限公司	IRF2204PBF	Infineon		原厂封装	9800	原装进口公司现货假一赔百	询价
深圳市欧立现代科技有限公司	IRF2204S	ir	24+	N/A	6980	原装现货,可开13%税票	询价
深圳市昌和盛利电子有限公司	IRF2204	IR	NEW	TO-220	35890	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市华斯顿科技有限公司	IRF220N	IR	25+23+	SMD	40455	绝对原装正品全新进口深圳现货	询价
深圳市赛美科科技有限公司	IRF2204PBFMOS(场效应管)	IR	新年份	TO-220	67430	一级代理原装正品现货,支持实单!	询价

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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
2020-4-18
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28

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IRF22价格

IRF22产品属性

IRF22供应商更多...

IRF22芯片相关品牌

IRF22规格书下载地址

IRF22参数引脚图相关

IRF22数据表相关新闻

IRF150P221AKMA1

IRF1407PBF

IRF2807PBF原装现货

IRF1404ZPBF

IRF2903ZSPBF公司大量原装现货/随时可以发货

IRF2807STRLPBF公司大量原装现货/随时可以发货

DdatasheetPDF页码索引