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IRF22价格

参考价格：￥9.8960

型号：IRF2204LPBF 品牌：IR 备注：这里有IRF22多少钱，2026年最近7天走势，今日出价，今日竞价，IRF22批发/采购报价，IRF22行情走势销售排行榜，IRF22报价。

型号	功能描述	生产厂家企业	LOGO
IRF220	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	FAIRCHILD 仙童半导体	FAIRCHILD
IRF220	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	SAMSUNG 三星	SAMSUNG
IRF220	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	INTERSIL	INTERSIL
IRF220	High Speed Applications DESCRIPTION • Drain Current ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) • High Speed Applications APPLICATIONS • Switching power supplies	ISC 无锡固电	ISC
IRF220	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF220-223	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	FAIRCHILD 仙童半导体	FAIRCHILD
IRF2204	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp	IRF	IRF
IRF2204	N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤3.6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation	ISC 无锡固电	ISC
IRF2204	40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装 \n优势:\n• 符合 RoHS\n• 具有业内先进的品质\n• 动态的dv/dt额定值\n• 快速开关\n• 完全雪崩额定值\n• 175°C 的工作温度;	INFINEON 英飞凌	INFINEON
IRF2204L	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im	IRF	IRF
IRF2204LPBF	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features	IRF	IRF
IRF2204S	AUTOMOTIVE MOSFET Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im	IRF	IRF
IRF2204S	丝印代码：D2PAK；isc N-Channel MOSFET Transistor • FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a	ISC 无锡固电	ISC
IRF2204SPBF	HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A ) Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features	IRF	IRF
IRF221	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	INTERSIL	INTERSIL
IRF221	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	SAMSUNG 三星	SAMSUNG
IRF221	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	FAIRCHILD 仙童半导体	FAIRCHILD
IRF221	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF222	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	FAIRCHILD 仙童半导体	FAIRCHILD
IRF222	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	SAMSUNG 三星	SAMSUNG
IRF222	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	INTERSIL	INTERSIL
IRF222	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF223	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	INTERSIL	INTERSIL
IRF223	N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V	FAIRCHILD 仙童半导体	FAIRCHILD
IRF223	N-CHANNEL POWER MOSFETS FEATURES • Low RDs	SAMSUNG 三星	SAMSUNG
IRF223	Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司	NJSEMI
IRF224	HEXFET TRANSISTORS 250V 1.1 ohm HEXFET	IRF	IRF
IRF225	HEXFET TRANSISTORS 250V 1.1 ohm HEXFET	IRF	IRF
IRF220	SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IRF220	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF220	4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs	RENESAS 瑞萨	RENESAS
IRF220	N-Channel Power MOSFETs, 7A, 150-200V	ONSEMI 安森美半导体	ONSEMI
IRF2204PBF	Advanced Process Technology 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204PBF	HEXFET짰 Power MOSFET 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204PBF_15	Advanced Process Technology 文件：263.64 Kbytes Page：9 Pages	IRF	IRF
IRF2204SPBF	Advanced Process Technology 文件：329.36 Kbytes Page：11 Pages	IRF	IRF
IRF2204SPBF_15	Advanced Process Technology 文件：329.36 Kbytes Page：11 Pages	IRF	IRF
IRF221	High Speed Applications 文件：48.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF221	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF222	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF222	High Speed Applications 文件：48.2 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF223	High Speed Applications 文件：48.21 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF223	N-Channel Power Mosfets 文件：154.1 Kbytes Page：5 Pages	ARTSCHIP	ARTSCHIP
IRF224	High Speed Applications 文件：48.33 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF225	High Speed Applications 文件：48.3 Kbytes Page：2 Pages	ISC 无锡固电	ISC
IRF22N60	N-Channel Power MOSFET 文件：383.33 Kbytes Page：7 Pages	NELLSEMI 尼尔半导体	NELLSEMI

IRF22产品属性

类型
描述
OPN：
IRF2204PBF
Qualification：
Non-Automotive
Package name：
TO220
VDS max：
40 V
RDS (on) @10V max：
3.6 mΩ
ID @25°C max：
210 A
QG typ @10V：
130 nC
Polarity：
N
VGS(th) min：
2 V
VGS(th) max：
4 V
VGS(th)：
3 V
Technology：
IR MOSFET™

IRF22供应商更多...

更新时间：2026-5-24 11:01:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市能元时代电子有限公司	IRF222	IR	23+	TO-3	52722	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市威尔健半导体有限公司	IRF222GE/RCA	IR	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市一线半导体有限公司	IRF222	IR	24+	TO-3	10000		询价
深圳市河锋鑫科技有限公司	IRF222	IR	22+	TO-3	6000	终端可免费供样,支持BOM配单	询价
中天科工半导体（深圳）有限公司	IRF222	IR	专业铁帽	TO-3	67500	铁帽原装主营-可开原型号增税票	询价
深圳市安富世纪电子有限公司	IRF222GE/RCA	IR	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市福田区绿盛电子商行	IRF222	IR	2015+	TO-3(铁帽)	19889	一级代理原装现货,特价热卖!	询价
天津市博通航睿技术有限公司	IRF222	IR	23+	TO-3	7000		询价
深圳市佳鑫美电子科技有限公司	IRF222GERCA	IOR	25+	DIP	2987	绝对全新原装现货供应!	询价
齐创科技(上海,北京,青岛)有限公司	IRF222GE/RCA	IR	23+	DIP	5000	原装正品,假一罚十	询价

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深圳市科恒伟业电子有限公司深圳市福田区华强北振兴路101号华匀大厦2栋5楼516 网站 http://www.kehengweiyedz.cn 网站http://www.kehengweiye.com 邮箱：yulin522@126.com 0755-83200050 15817287769 柯先生
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找IC，尽在114IC

IRF22价格

IRF22产品属性

IRF22供应商更多...

IRF22芯片相关品牌

IRF22规格书下载地址

IRF22参数引脚图相关

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DdatasheetPDF页码索引