Description

This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

• Advanced Process Technology

• Ultra Low On-Resistance

• Dynamic dv/dt Rating

• 175°C Operating Temperature

• Fast Switching

• Repetitive Avalanche Allowed up to Tjmax

• Lead-Free

Typical Applications

• Industrial Motor Drive