4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

High Speed Applications

DESCRIPTION • Drain Current ID=5A@ TC=25℃ • Drain Source Voltage- : VDSS= 200V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.8Ω(Max) • High Speed Applications APPLICATIONS • Switching power supplies

SEMICONDUCTORS

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HiRel MOSFETs

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power Mosfets

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N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤3.6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

HEXFET짰 Power MOSFET

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Advanced Process Technology

文件：263.64 Kbytes Page：9 Pages

Advanced Process Technology

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Advanced Process Technology

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Advanced Process Technology

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SHIELDED SMT POWER INDUCTORS

● FEATURE Various high power inductor are Superior to be high saturation for surface mounting ● APPLICATIONS 2 DC/DC converter power supply, Telecommunication equipment

1/4 FLAT PLUG PHONE PLUGS

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The 2AG Special Fuses with various voltage ratings provide special electric performance as required

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Mini 7/8 Male 4 Pin Field Attachable

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SMK MALE TO MALE RADIUS RIGHT ANGLE ADAPTEER

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