位置:首页 > IC中文资料第249页 > IRF222
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF222 | N-CHANNEL POWER MOSFETS FEATURES • Low RDs | SAMSUNG 三星 | ||
IRF222 | 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica | INTERSIL | ||
IRF222 | N-Channel Power MOSFETs, 7A, 150-200V N-Channel Power MOSFETs 7A 150-200V | FAIRCHILD 仙童半导体 | ||
IRF222 | Nanosecond Switching Speeds Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | ||
IRF222 | N-Channel Power Mosfets 文件:154.1 Kbytes Page:5 Pages | ARTSCHIP | ||
IRF222 | Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3 | ETC 知名厂家 | ETC | |
IRF222 | High Speed Applications 文件:48.2 Kbytes Page:2 Pages | ISC 无锡固电 | ||
丝印代码:N9*;COMMON CATHODE SILICON DUAL SWITCHING DIODE This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD | ONSEMI 安森美半导体 | |||
SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac | MOTOROLA 摩托罗拉 | |||
SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available | MOTOROLA 摩托罗拉 | |||
Field Effect Transistor Dual Gate N-Channel MOSFET Field Effect Transistor Dual Gate N–Channel MOSFET | NTE | |||
Transistor array to drive the small motor Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated | PANASONIC 松下 |
IRF222产品属性
- 类型
描述
- 型号
IRF222
- 制造商
International Rectifier
- 功能描述
MOSFET Transistor, N-Channel, TO-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2026+ |
TO-3 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
IR |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
IR |
26+ |
QFN |
890000 |
一级总代理商原厂原装大批量现货
一站式服务 |
|||
IR |
2015+ |
TO-3(铁帽) |
19889 |
一级代理原装现货,特价热卖! |
|||
IR |
25+23+ |
TO-220 |
26069 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-3 |
10000 |
||||
IRF223 |
25+ |
80 |
80 |
||||
IR |
0919+ |
TO-220 |
541 |
全新 发货1-2天 |
|||
IR |
23+ |
DIP |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
TO-3 |
7000 |
IRF222规格书下载地址
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DdatasheetPDF页码索引
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