型号 功能描述 生产厂家 企业 LOGO 操作
IRF222

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

SAMSUNG

三星

IRF222

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

INTERSIL

IRF222

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

FAIRCHILD

仙童半导体

IRF222

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF222

N-Channel Power Mosfets

文件:154.1 Kbytes Page:5 Pages

ARTSCHIP

IRF222

Trans MOSFET N-CH 200V 4A 3-Pin(2+Tab) TO-3

ETC

知名厂家

IRF222

High Speed Applications

文件:48.2 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:N9*;COMMON CATHODE SILICON DUAL SWITCHING DIODE

This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT−416/SC−90 package which is designed for low power surface mount applications, where board space is at a premium. Features • Fast trr • Low CD

ONSEMI

安森美半导体

SOT-416/SC-90 PACKAGE COMMON CATHODE DUAL SWITCHING DIODE SURFACE MOUNT

Common Cathode Dual Switching Diode Surface Mount This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board spac

MOTOROLA

摩托罗拉

SOT-416/SC-90 PACKAGE COMMON ANODE DUAL SWITCHING DIODE SURFACE MOUNT

This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board space is at a premium. • Fast trr • Low CD • Available

MOTOROLA

摩托罗拉

Field Effect Transistor Dual Gate N-Channel MOSFET

Field Effect Transistor Dual Gate N–Channel MOSFET

NTE

Transistor array to drive the small motor

Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) For motor drives ■ Features • Small and lightweight • Low power consumption (low VCE(sat) transistor used) • Low voltage drive • Transistors with built-in resistor with 6 elements incorporated

PANASONIC

松下

IRF222产品属性

  • 类型

    描述

  • 型号

    IRF222

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET Transistor, N-Channel, TO-3

更新时间:2026-3-14 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2026+
TO-3
54648
百分百原装现货 实单必成 欢迎询价
IR
24+
DIP
880000
明嘉莱只做原装正品现货
IR
26+
QFN
890000
一级总代理商原厂原装大批量现货 一站式服务
IR
2015+
TO-3(铁帽)
19889
一级代理原装现货,特价热卖!
IR
25+23+
TO-220
26069
绝对原装正品全新进口深圳现货
IR
24+
TO-3
10000
IRF223
25+
80
80
IR
0919+
TO-220
541
全新 发货1-2天
IR
23+
DIP
5000
原装正品,假一罚十
IR
23+
TO-3
7000

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