AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET®Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and imp

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤3.6mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

AUTOMOTIVE MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features to this design are a 175°C junction operating temperature, fast switching speed and im

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

HEXFET짰 Power MOSFET ( VDSS = 40V , RDS(on) = 3.6m廓 , ID = 170A )

Description This HEXFET® Power MOSFET utilizes the lastest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features

HEXFET® Power MOSFET ( VDSS = 40V , RDS(on) = 3.6mΩ , ID = 170A )

HEXFET짰 Power MOSFET

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Advanced Process Technology

文件：263.64 Kbytes Page：9 Pages

Advanced Process Technology

文件：263.64 Kbytes Page：9 Pages

40V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 封装

Advanced Process Technology

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Advanced Process Technology

文件：329.36 Kbytes Page：11 Pages

FEMALE THREADED STANDOFFS

[KEYSTONE] THREADED STANDOFFS

Microminiature Reed Relays

MICROMINIATURE REED RELAYS Ideally suited to the needs of Automated Test Equipment and RF requirements. The specification tables allow you to select the appropriate relay for your particular application. If your requirements differ, please consult your local representative or Coto’s Factory. 220

high Current Toroid Inductors

[J.W.Miller]

Extra Dome Plugs

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High Current Toroid Inductors Horizontal or vertical mount Low cost

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