位置:首页 > IC中文资料 > IRF221

型号 功能描述 生产厂家 企业 LOGO 操作
IRF221

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs

SAMSUNG

三星

IRF221

4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

INTERSIL

IRF221

N-Channel Power MOSFETs, 7A, 150-200V

N-Channel Power MOSFETs 7A 150-200V

FAIRCHILD

仙童半导体

IRF221

Nanosecond Switching Speeds

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF221

N-Channel Power Mosfets

文件:154.1 Kbytes Page:5 Pages

ARTSCHIP

IRF221

Trans MOSFET N-CH 150V 5A 3-Pin(2+Tab) TO-3

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF221

High Speed Applications

文件:48.21 Kbytes Page:2 Pages

ISC

无锡固电

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

MOTOROLA

摩托罗拉

CD-Interface and Audio Processor(CIAP)

CD-Interface and Audio Processor(CIAP) This technical summary provides a brief description of the MCD221 CD–Interface and Audio Processor. A complete data sheet for the MCD221 is available and can be ordered from your local Motorola sales office. The order number is MCD221/D. The MCD221 has two

MOTOROLA

摩托罗拉

MOSFET Dual Gate, N-Channel for VHF TV Receivers Applications

Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier applications. Features: • Extremely Low Feedback Capacitance •

NTE

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

PANASONIC

松下

Silicon NPN epitaxial planer transistor

Silicon NPN epitaxial planar transistor For digital circuits ■ Features • Costs can be reduced through downsizing of the equipment and reduction of the number of parts. • Mini type package allowing easy automatic insertion through tape packing and magazine packing

PANASONIC

松下

IRF221产品属性

  • 类型

    描述

  • Maximum Power Dissipation:

    40000mW

  • Maximum Drain Source Voltage:

    150V

  • Maximum Continuous Drain Current:

    5A

  • Configuration:

    Single

  • Channel Type:

    N

  • Category:

    Power MOSFET

更新时间:2026-5-16 16:51:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO-3
10000
IR
25+23+
TO-220
26069
绝对原装正品全新进口深圳现货
IRF223
25+
80
80
IR
26+
QFN
890000
一级总代理商原厂原装大批量现货 一站式服务
IR
0919+
TO-220
541
全新 发货1-2天
IR
23+
DIP
5000
原装正品,假一罚十
IOR
25+
DIP
2987
绝对全新原装现货供应!
IR
23+
SOT223
8000
专注配单,只做原装进口现货
IR
23+
SOT223
7000
IR
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票

IRF221数据表相关新闻