位置:首页 > IC中文资料第6962页 > I2PAK

型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:I2PAK;N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

VBSEMI

微碧半导体

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 15A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.78Ω (Max) • 100 avalanche tested • Minimum Lot-to-

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 20A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.199Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 25A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.19Ω (Max) • 100 avalanche tested • Minimum Lot-to-

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=4A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.9Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=7A@ TC=25℃ • Drain Source Voltage- : VDSS=600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.6Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 7.0A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.65Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;nullIsc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;iscN-Channel MOSFET Transistor

• DESCRITION • Switching Voltage Regulators • FEATURES • Low drain-source on-resistance: RDS(ON) = 1.2Ω (MAX) • Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.25mA) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(I2PAK) package • Low input capacitance and gate charge • High peak current capability • Improved transconductance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With To-262(I2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.3A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching a

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 8.5A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • Drain Current –ID= 11A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 360mΩ (Max) • 100 avalanche tested • Low input capacitance and gate charge • Minimum Lot-to-Lot variations for robust device performance and relia

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel Mosfet Transistor

• FEATURES • Drain Current ID= 12A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=22A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 139mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=22A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 148mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=28A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 110mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

• FEATURES • With TO-262(I2PAK) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=33A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 79mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

ISC

无锡固电

丝印代码:I2PAK;Isc N-Channel MOSFET Transistor

• FEATURES • With TO-262( I2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switchi

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 60mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

ISC

无锡固电

丝印代码:I2PAK;Ultra fast Rectifier

FEATURES • With TO-262(I2PAK) packaging • Low leakage current, low power loss, high efficiency • High frequency operation • High current capability • Low stored charge majority carrier conduction • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.49 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.35 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.89 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.12 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.38 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.12 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.26 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.84 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.25 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.04 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.61 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.92 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.9 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.95 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.33 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.84 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.46 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.97 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.21 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.48 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.39 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.18 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.06 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.43 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.41 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.97 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.98 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:300.01 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.05 Kbytes Page:2 Pages

ISC

无锡固电

丝印代码:I2PAK;isc N-Channel MOSFET Transistor

文件:299.84 Kbytes Page:2 Pages

ISC

无锡固电

I2PAK产品属性

  • 类型

    描述

  • 型号

    I2PAK

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    I2PAK Package Dimensions

更新时间:2026-5-24 0:55:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST/意法半导体
25+
I2PAK
20000
公司只有正品,实单可谈
STMICRO
25+
N/A
11528
样件支持,可原厂排单订货!
STMICRO
25+
N/A
11580
正规渠道,免费送样。支持账期,BOM一站式配齐
ST
23+
原盒原包装
33000
全新原装假一赔十
ST
*
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
ST
24+
TO-220
1000
原装现货热卖
ST/意法
2450+
TO-262
9850
只做原装正品现货或订货假一赔十!
ST
23+
TO262
6996
只做原装正品现货
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST/意法
23+
I2PAK
771

I2PAK数据表相关新闻