N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 7A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 60mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching appl

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 7.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 650V(Min) -RDS(on) = 0.6Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

N-Channel 650V (D-S) Power MOSFET

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isc N-Channel MOSFET Transistor

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a Phase-Dimmable, Primary-Side Regulated LED Driver

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