位置：首页 > IC中文资料第2652页 > IPI60R380C6
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPI60R380C6 | MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
IPI60R380C6 | nullIscN-ChannelMOSFETTransistor •FEATURES •WithTo-262(I2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
IPI60R380C6 | MOSFETMetalOxideSemiconductorFieldEffectTransistor Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI60R380C6 | MetalOxideSemiconductorFieldEffectTransistor 文件：1.41181 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω·Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobust | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.CoolMOS™C6seriescombinestheexperienceoftheleadingSJMOSFETsupplierwithhighclassinnovation.Theresulting | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackaging •Highspeedswitching •Veryhighcommutationruggedness •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •PFCstages,hardswitchingPWMstagesandresonants | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
MetalOxideSemiconductorFieldEffectTransistor 文件：1.41181 Mbytes Page：19 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPI60R380C6产品属性
- 类型
描述
- 型号
IPI60R380C6
- 功能描述
MOSFET N-CH 600V 10.6A TO262
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
CoolMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
2339+ |
PG-TO262-3 |
32280 |
原装现货 假一罚十！十年信誉只做原装！ |
|||
infineon |
21+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon/英飞凌 |
2023+ |
PG-TO262-3 |
6000 |
全新原装深圳仓库现货有单必成 |
|||
INFINEON |
23+ |
NA |
15 |
现货!就到京北通宇商城 |
|||
Infineon |
2023 |
5000 |
公司原装现货/支持实单 |
||||
INFINEON |
2019 |
TO262 |
55000 |
原装正品现货可开13点税 |
|||
INFINEON |
2021++ |
TO262 |
5850 |
全新原装现货 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
7188 |
秉承只做原装 终端我们可以提供技术支持 |
|||
Infineon/英飞凌 |
23+ |
PG-TO262-3 |
12700 |
买原装认准中赛美 |
|||
INFINEON/英飞凌 |
2021+ |
TO-262 |
17112 |
原装进口假一罚十 |
IPI60R380C6芯片相关品牌
IPI60R380C6规格书下载地址
IPI60R380C6参数引脚图相关
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IPI60R380C6数据表相关新闻
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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