• FEATURES

• Drain Current –ID= 11A@ TC=25℃

• Drain Source Voltage-

: VDSS= 600V(Min)

• Static Drain-Source On-Resistance

: RDS(on) = 360mΩ (Max)

• 100 avalanche tested

• Low input capacitance and gate charge

• Minimum Lot-to-Lot variations for robust device

performance and reliable operation

• APPLICATIONS

• Switching applications