型号 功能描述 生产厂家 企业 LOGO 操作
AOW11S65

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

AOW11S65

650V 11A a MOS TM Power Transistor

General Description The AOW11S65 & AOWF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability t

AOSMD

万国半导体

AOW11S65

高压MOSFET (500V - 1000V)

AOS

美国万代

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID=11A@ TC=25℃ • Drain Source Voltage- : VDSS=650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.399Ω (Max) • 100 avalanche tested • Minimum Lot-to-L

ISC

无锡固电

650V 11A a MOS Power Transistor

General Description The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanch

AOSMD

万国半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

VBSEMI

微碧半导体

N-Channel 650 V (D-S) MOSFET

FEATURES • Reduced trr, Qrr, and IRRM • Low figure-of-merit (FOM) Ron x Qg • Low input capacitance (Ciss) • Low switching losses due to reduced Qrr • Ultra low gate charge (Qg) • Avalanche energy rated (UIS) APPLICATIONS • Telecommunications - Server and telecom power supplies • Light

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 18A@ TC=25℃ · Drain Source Voltage -VDSS= 650V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.36Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and AC-DC applications

ISC

无锡固电

更新时间:2025-12-11 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
AOS/万代
25+
TO-262
54558
百分百原装现货 实单必成 欢迎询价
AOS/万代
22+
TO262
25000
AOS/万代全系列在售
AOS/万代
23+
TO262
30000
原装正品假一罚十,代理渠道价格优
AOS/万代
21+
TO-262
30000
优势供应 实单必成 可13点增值税
AOS/万代
2450+
TO-262
6540
只做原装正品假一赔十为客户做到零风险!!
AOS
25+
TO-220
86720
全新原装进口现货价格优惠 本公司承诺原装正品假一赔
Alpha & Omega Semiconductor In
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
AOS/万代
24+
TO-262
19818
公司现货库存 支持实单
AOS/万代
24+
NA/
2460
优势代理渠道,原装正品,可全系列订货开增值税票
AOS/万代
23+
TO-262
24190
原装正品代理渠道价格优势

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