丝印代码：I2PAK；N-Channel 30-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC

TMOS POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS

HDTMOS E-FET™ Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to with stand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–so

TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS

HDTMOS E-FET High Density Power FET N–Channel Enhancement–Mode Silicon Gate This advanced high–cell density HDTMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. De

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for extremely low RDS(ON). ● High power and current handling capability. ● TO-220 and TO-263 package.

Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220

文件：73.4 Kbytes Page：8 Pages

Power MOSFET 75 Amps, 25 Volts N-Channel D2PAK, TO-220

文件：73.4 Kbytes Page：8 Pages