丝印代码：I2PAK；isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID=28A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 110mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

丝印代码：34N65M5；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

丝印代码：34N65M5；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

丝印代码：34N65M5；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve

丝印代码：34N65M5；N-channel 650 V, 0.09 typ., 28 A MDmesh V Power MOSFETs in D2PAK, I2PAK, TO-220 and TO-247 packages

Features • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability • Excellent switching performance • 100 avalanche tested Applications • Switching applications Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary ve