型号 功能描述 生产厂家 企业 LOGO 操作
STI11NM60ND

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

STMICROELECTRONICS

意法半导体

STI11NM60ND

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 6.3A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching a

ISC

无锡固电

STI11NM60ND

N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

文件:756.46 Kbytes Page:19 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件:1.032609 Mbytes Page:8 Pages

VBSEMI

微碧半导体

N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件:357.14 Kbytes Page:16 Pages

STMICROELECTRONICS

意法半导体

STI11NM60ND产品属性

  • 类型

    描述

  • 型号

    STI11NM60ND

  • 功能描述

    MOSFET N-Ch, 600V-0.37ohms FDMesh 10A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-27 12:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ADI/亚德诺
2511
原封装
66900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ST
2526+
原厂封装
50000
15年芯片行业经验/只供原装正品:0755-83268994邹小姐
ST/意法
23+
N
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
ADI
三年内
1983
只做原装正品
ST
23+
TO2623 Long Leads I2Pak TO262A
8000
只做原装现货
ADI
24+
SMD
20
“芯达集团”专营军工百分之百原装进口
ST/意法
25+
NA
860000
明嘉莱只做原装正品现货
ST
22+
TO2623 Long Leads I2Pak TO262A
9000
原厂渠道,现货配单
ST/意法半导体
25+
原厂封装
9999

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