位置:首页 > IC中文资料第4613页 > STI11NM60ND
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STI11NM60ND | N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi | STMICROELECTRONICS 意法半导体 | ||
STI11NM60ND | isc N-Channel MOSFET Transistor FEATURES • Drain Current –ID= 6.3A@ TC=25℃ • Drain Source Voltage- : VDSS= 600V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.45Ω (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching a | ISC 无锡固电 | ||
STI11NM60ND | N-channel 600 V, 0.37 廓, 10 A, FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK 文件:756.46 Kbytes Page:19 Pages | STMICROELECTRONICS 意法半导体 | ||
N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode) DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | |||
N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo | STMICROELECTRONICS 意法半导体 | |||
N-Channel 650 V (D-S) MOSFET 文件:1.032609 Mbytes Page:8 Pages | VBSEMI 微碧半导体 | |||
N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET 文件:357.14 Kbytes Page:16 Pages | STMICROELECTRONICS 意法半导体 |
STI11NM60ND产品属性
- 类型
描述
- 型号
STI11NM60ND
- 功能描述
MOSFET N-Ch, 600V-0.37ohms FDMesh 10A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI/亚德诺 |
2511 |
原封装 |
66900 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
ST/意法 |
22+ |
N |
30000 |
十七年VIP会员,诚信经营,一手货源,原装正品可零售! |
|||
ST |
2526+ |
原厂封装 |
50000 |
15年芯片行业经验/只供原装正品:0755-83268994邹小姐 |
|||
ST/意法 |
23+ |
N |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
ADI |
三年内 |
1983 |
只做原装正品 |
||||
ST |
23+ |
TO2623 Long Leads I2Pak TO262A |
8000 |
只做原装现货 |
|||
ADI |
24+ |
SMD |
20 |
“芯达集团”专营军工百分之百原装进口 |
|||
ST/意法 |
25+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
ST |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
9999 |
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