N-channel600V-0.37廓-10A-FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

Description ThedeviceisanN-channelFDmesh™IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

iscN-ChannelMOSFETTransistor

FEATURES •DrainCurrent–ID=6.3A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switchinga

N-channel600V,0.37廓,10A,FDmesh??IIPowerMOSFETI2PAK,TO-220,TO-220FP,IPAK,DPAK

文件：756.46 Kbytes Page：19 Pages

N-channel600V-0.40OHM-11A-TO-220/TO-220FP/D2PAK/I2PAKFDmeshTMPowerMOSFET(withfastdiode)

DESCRIPTION TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■TYPICALRDS(on)=0.40Ω ■HIGHdv/dtANDAVALANCHECA

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-channel600V-0.37ohm-10A-TO-220-TO-220FP-IPAK-DPAKSecondgenerationMDmeshPowerMOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

N-Channel650V(D-S)MOSFET

文件：1.032609 Mbytes Page：8 Pages

N-channel30V-0.014ohm-45ATO-220-TO-220FP-D2PAKSTripFETIIpowerMOSFET

文件：357.14 Kbytes Page：16 Pages