500V 29A a MOS TM Power Transistor

General Description The AOW29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be a

丝印代码：I2PAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

高压MOSFET (500V - 1000V)

500V 29A αMOS™ Power Transistor

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

isc N-Channel MOSFET Transistor

DESCRIPTION • Designed for use in switch mode power supplies and general purpose applications. FEATURES • Drain Current –ID= 29A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.15Ω (Max) • 100 avalanche tested • Minimum Lot-to-

isc N-Channel MOSFET Transistor

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isc N-Channel MOSFET Transistor

文件：296.59 Kbytes Page：2 Pages

isc N-Channel MOSFET Transistor

文件：296.75 Kbytes Page：2 Pages