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HGTG12N60价格
参考价格：￥14.7088
型号：HGTG12N60A4D 品牌：FAI 备注：这里有HGTG12N60多少钱，2024年最近7天走势，今日出价，今日竞价，HGTG12N60批发/采购报价，HGTG12N60行情走势销售排行榜，HGTG12N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
600V,SMPSSeriesN-ChannelIGBTs TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4S9AareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-stat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  |   | |
600V,SMPSSeriesN-ChannelIGBT TheHGTP12N60A4,HGTG12N60A4andHGT1S12N60A4SareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-state | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
600V,SMPSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60A4D,HGTP12N60A4Dand HGT1S12N60A4DSareMOSgatedhighvoltageswitchingdevicescombiningthebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-st | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
27A,600V,UFSSeriesN-ChannelIGBTs ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybe | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
27A,600V,UFSSeriesN-ChannelIGBTswithAnti-ParallelHyperfastDiode ThisfamilyofMOSgatedhighvoltageswitchingdevicescombinethebestfeaturesofMOSFETsandbipolartransistors.ThesedeviceshavethehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatelybe | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
24A,600V,UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode Description TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvarieso | HARRIS HARRIS corporation |  | | |
24A,600V,UFSSERIESN-CHANNELIGBTWITHANTI-PARALLELHYPERFASTDIODE TheHGTG12N60C3DisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymoderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
UFSSeriesN-ChannelIGBTwithAnti-ParallelHyperfastDiode24A,600V TheHGTG12N60C3DisaMOSgatedhighvoltageswitching devicecombiningthebestfeaturesofMOSFETsandbipolar transistors.ThedevicehasthehighinputimpedanceofaMOSFET andthelowon−stateconductionlossofabipolartransistor.Themuch loweron−statevoltagedropvariesonlymoder | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
12A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymo | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
12A,600VN-ChannelIGBTwithAnti-ParallelUltrafastDiode Description TheIGBTisaMOSgatedhighvoltageswitchingdevicecombiningthebestfeaturesofMOSFETsandbipolartransistors.ThedevicehasthehighinputimpedanceofaMOSFETandthelowon-stateconductionlossofabipolartransistor.Themuchloweron-statevoltagedropvariesonlymo | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 54A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 27A 104W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | | | |
12Amps,600/650VoltsN-CHANNELMOSFET TheUTC12N60areN-Channelenhancementmodepowerfieldeffecttransistors(MOSFET)whichareproducedusingUTCsproprietary,planarstripe,DMOStechnology. Thesedevicesaresuitedforhighefficiencyswitchmodepowersupply.Tominimizeon-stateresistance,providesuperiorswitchingp | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
12Amps,600/650VoltsN-CHANNELMOSFET 文件：358.2 Kbytes Page：7 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
12A600VN-channelEnhancementModePowerMOSFET 文件：897.58 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 |  | | |
12A600VN-channelEnhancementModePowerMOSFET 文件：898.09 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | | |
12A600VN-channelEnhancementModePowerMOSFET 文件：897.54 Kbytes Page：11 Pages | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | | |
HGTG12N60产品属性
- 类型
描述
- 型号
HGTG12N60
- 功能描述
IGBT 晶体管 600V N-Channel IGBT SMPS Series
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHLD |
23+ |
TO-247 |
3260 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
FSC |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
|||
FAIRCHILD/仙童 |
2023+ |
TO-3P |
1976 |
十五年行业诚信经营,专注全新正品 |
|||
FAI |
04+ |
TO-3P |
68 |
||||
ON |
TO-247 |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
||||
Fairchild(飞兆/仙童) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
ON/安森美 |
23+ |
TO-247 |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
Fairchild(飞兆/仙童) |
2335 |
Original |
50000 |
只做原装优势现货库存,渠道可追溯 |
|||
ON/安森美 |
21+ |
TO-247 |
5590 |
只做原装正品假一赔十!正规渠道订货! |
|||
ON/安森美 |
22+ |
SMD |
9000 |
原装正品 |
HGTG12N60芯片相关品牌
HGTG12N60规格书下载地址
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