HGTG12N60A4价格

参考价格:¥14.7088

型号:HGTG12N60A4D 品牌:FAI 备注:这里有HGTG12N60A4多少钱,2025年最近7天走势,今日出价,今日竞价,HGTG12N60A4批发/采购报价,HGTG12N60A4行情走势销售排行榜,HGTG12N60A4报价。
型号 功能描述 生产厂家&企业 LOGO 操作
HGTG12N60A4

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG12N60A4

600V, SMPS Series N-Channel IGBT

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state

Intersil

HGTG12N60A4

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 54A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

Intersil

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 54A 167W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

ONSEMI

安森美半导体

600V, SMPS Series N-Channel IGBTs

The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

Intersil

600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

HGTG12N60A4产品属性

  • 类型

    描述

  • 型号

    HGTG12N60A4

  • 功能描述

    IGBT 晶体管 600V N-Channel IGBT SMPS Series

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2025-8-15 18:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FSC
12+
TO-247
170
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FSC
20+
TO-247
36900
原装优势主营型号-可开原型号增税票
FAIRCHILD/仙童
2450+
NA
8850
只做原装正品假一赔十为客户做到零风险!!
Fairchild(飞兆/仙童)
24+
N/A
9832
原厂可订货,技术支持,直接渠道。可签保供合同
INTESIL
23+
TO-3P
8000
专做原装正品,假一罚百!
FSC
25+23+
TO-247
14932
绝对原装正品全新进口深圳现货
FAIRCHILD/仙童
23+
TO-247
27458
原厂授权一级代理,专业海外优势订货,价格优势、品种
FAIRCHLD
23+
TO-247
3260
绝对全新原装!优势供货渠道!特价!请放心订购!
FAI
24+
TO-3P
68
FAIRCHILD
23+
TO-247
9526

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