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HGTG12N60C3D中文资料
HGTG12N60C3D数据手册规格书PDF详情
The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061.
Features
• 24A, 600V at TC = 25°C
• Typical Fall Time. . . . . . . . . . . . . . . . 210ns at TJ = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti-Parallel Diode
HGTG12N60C3D产品属性
- 类型
描述
- 型号
HGTG12N60C3D
- 功能描述
IGBT 晶体管 24a 600V IGBT UFS N-Channel
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Fairchild/ON |
22+ |
TO247 |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
TO-247 |
27300 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILDSEM |
2025+ |
TO-247-3 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
Fairchild/ON |
23+ |
TO247 |
7000 |
||||
FAIRCHILD |
NEW |
TO-247 |
9526 |
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订 |
|||
onsemi(安森美) |
24+ |
TO-247 |
1224 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
仙童 |
05+ |
TO-247 |
6000 |
原装进口 |
|||
FSC |
24+ |
TO247 |
5000 |
全现原装公司现货 |
|||
FSC |
25+23+ |
原厂原包 |
23259 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
三年内 |
1983 |
只做原装正品 |
HGTG12N60C3D 价格
参考价格：￥18.2640
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