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HGTG12N60C3D价格
参考价格：￥18.2640
型号：HGTG12N60C3D 品牌：FAIRCHILD 备注：这里有HGTG12N60C3D多少钱，2025年最近7天走势，今日出价，今日竞价，HGTG12N60C3D批发/采购报价，HGTG12N60C3D行情走势销售排行榜，HGTG12N60C3D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG12N60C3D | UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moder | ONSEMI 安森美半导体 |   | |
HGTG12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Intersil | | |
HGTG12N60C3D | 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Description The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies o | HARRIS | | |
HGTG12N60C3D | 24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
HGTG12N60C3D | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 24A 104W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMI 安森美半导体 | | |
HGTG12N60C3D | 24A，600V，UFS 串联 N 沟道 IGBT，带防并联 Hyperfast 二极管 | ONSEMI 安森美半导体 | | |
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | ||
UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 24 A, 600 V The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on−state conduction loss of a bipolar transistor. The much lower on−state voltage drop varies only moder | ONSEMI 安森美半导体 | |
HGTG12N60C3D产品属性
- 类型
描述
- 型号
HGTG12N60C3D
- 功能描述
IGBT 晶体管 24a 600V IGBT UFS N-Channel
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
25+23+ |
原厂原包 |
23259 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
Intersil |
24+ |
TO-247 |
8866 |
||||
FCS |
20+ |
TO-2473L |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
FAIRCHILD |
23+ |
TO-247 |
9526 |
||||
FAIRCHILD/仙童 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
|||
FAIRC |
23+ |
TO-247 |
7300 |
专注配单,只做原装进口现货 |
|||
Fairchild/ON |
23+ |
TO247 |
7000 |
||||
ONSEMI |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
仙童 |
05+ |
TO-247 |
6000 |
原装进口 |
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