位置：首页 > IC中文资料第10515页 > 12N60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
12N60 | 12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 |   | |
12N60 | 12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | |
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.58 Kbytes Page：11 Pages | WXDH 东海半导体 | | |
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.09 Kbytes Page：11 Pages | WXDH 东海半导体 | | |
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件：897.54 Kbytes Page：11 Pages | WXDH 东海半导体 | | |
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件：898.24 Kbytes Page：11 Pages | WXDH 东海半导体 | | |
12N60 | N-Channel 650V (D-S) Power MOSFET 文件：1.0672 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
12N60 | 600V N-Channel Power MOSFET 文件：2.2536 Mbytes Page：9 Pages | DYELEC 迪一电子 | | |
12N60 | N-Channel Power MOSFET 文件：356.07 Kbytes Page：7 Pages | NELLSEMI 尼尔半导体 | | |
12N60 | N-CHANNEL POWER MOSFET 文件：820.57 Kbytes Page：7 Pages | ZSELEC 淄博圣诺 | | |
12N60 | 12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | |
12N60 | 12A mps,600 Volts N-CHANNEL MOSFET 文件：194.03 Kbytes Page：2 Pages | CHONGQING 平伟实业 | | |
12N60 | Drain Current ?밒D= 12A@ TC=25C 文件：136.61 Kbytes Page：2 Pages | ISC 无锡固电 | | |
12N60 | N-CHANNEL POWER MOSFET 文件：2.48891 Mbytes Page：8 Pages | SUNMATE 森美特 | | |
12N60 | 12A, 600V N-CHANNEL POWER MOSFET | UTC 友顺 | | |
600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | Fairchild 仙童半导体 | | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st | Intersil | | ||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st | Fairchild 仙童半导体 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | | ||
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | Fairchild 仙童半导体 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A 600V N-channel enhanced field effect transistor 文件：885.41 Kbytes Page：5 Pages | YFWDIODE 佑风微 | | ||
12A, 600V N-CHANNEL POWER MOSFET | UTC 友顺 | | ||
高压MOSFET | ETC 知名厂家 | ETC | | |
N-CHANNEL POWER MOSFET 文件：2.48891 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL POWER MOSFET 文件：2.48891 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：2.14186 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件：358.2 Kbytes Page：7 Pages | UTC 友顺 | | ||
12A竊?00V N-CHANNEL MOSFET 文件：451 Kbytes Page：7 Pages | KIA 可易亚半导体 | | ||
N-CHANNEL POWER MOSFET 文件：2.48891 Mbytes Page：8 Pages | SUNMATE 森美特 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件：204.7 Kbytes Page：5 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.1063 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | | ||
12A, 600V N-CHANNEL POWER MOSFET 文件：371.21 Kbytes Page：7 Pages | UTC 友顺 | | ||
N-CHANNEL JUNCTION FET 文件：379.24 Kbytes Page：8 Pages | UTC 友顺 | |
12N60产品属性
- 类型
描述
- 型号
12N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
12 Amps, 600/650 Volts N-CHANNEL MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CYSTECHEL |
15+ |
TO-220F |
4500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
UTC/友顺 |
25+ |
TO-220 |
32360 |
UTC/友顺全新特价12N60L-TA3-T即刻询购立享优惠#长期有货 |
|||
耐美NAMC |
24+ |
NA/ |
115240 |
原装现货,当天可交货,原型号开票 |
|||
UTC(友顺) |
24+/25+ |
TO-220F2 |
50 |
UTC原厂一级代理商,价格优势! |
|||
JDP |
2018+ |
TO-220 |
18331 |
||||
FSC |
25+ |
TO-220F |
6500 |
十七年专营原装现货一手货源,样品免费送 |
|||
TO-220 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
KODENSHI AUK |
24+ |
TO-220F |
18000 |
绝对原厂原装,长期优势可定货 |
|||
FSC |
25+23+ |
TO-220 |
24880 |
绝对原装正品全新进口深圳现货 |
|||
FSC |
18+ |
TO-220 |
85600 |
保证进口原装可开17%增值税发票 |
12N60规格书下载地址
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12N60数据表相关新闻
12N60L-TO220F1T-TGML_UTC代理商
12N60L-TO220F1T-TGML_UTC代理商
2023-2-2412N30L-TO252R-TZ1G_UTC代理商
12N30L-TO252R-TZ1G_UTC代理商
2023-2-1612N65L-TO262T-TGML_UTC代理商
12N65L-TO262T-TGML_UTC代理商
2023-2-712-MMF-002-5-F 全新原装
12-MMF-002-5-F
2022-9-1312N10
12N10，全新原装当天发货或门市自取0755-82732291.
2020-6-1612N65KL-TF1-T
联系人：陈先生 电话：18018738768（微信同号） QQ：1005525513 我司有一手货源，价优，可以长期提供大量，优质的货源，专业的渠道，物美价廉是公司与客户之间共同的理念 由于公司型号众多，无法一一上传，如在网站找不到您要的产品，请联系业务员，本司可提供电子元器件配单服务 我司部分现货库存如下： HSMS-2805#L
2020-4-15
DdatasheetPDF页码索引
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