位置:首页 > IC中文资料第10515页 > 12N60
型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
---|---|---|---|---|
12N60 | 12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | ||
12N60 | 12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件:358.2 Kbytes Page:7 Pages | UTC 友顺 | ||
12N60 | 12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | ||
12N60 | N-CHANNEL POWER MOSFET 文件:2.48891 Mbytes Page:8 Pages | SUNMATE 森美特 | ||
12N60 | 12A mps,600 Volts N-CHANNEL MOSFET 文件:194.03 Kbytes Page:2 Pages | CHONGQING 平伟实业 | ||
12N60 | Drain Current ?밒D= 12A@ TC=25C 文件:136.61 Kbytes Page:2 Pages | ISC 无锡固电 | ||
12N60 | 600V N-Channel Power MOSFET 文件:2.2536 Mbytes Page:9 Pages | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | ||
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件:897.58 Kbytes Page:11 Pages | WXDH 东海半导体 | ||
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件:898.09 Kbytes Page:11 Pages | WXDH 东海半导体 | ||
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件:897.54 Kbytes Page:11 Pages | WXDH 东海半导体 | ||
12N60 | 12A 600V N-channel Enhancement Mode Power MOSFET 文件:898.24 Kbytes Page:11 Pages | WXDH 东海半导体 | ||
12N60 | N-Channel 650V (D-S) Power MOSFET 文件:1.0672 Mbytes Page:9 Pages | VBSEMI 微碧半导体 | ||
12N60 | N-CHANNEL POWER MOSFET 文件:820.57 Kbytes Page:7 Pages | ZSELEC 淄博圣诺 | ||
12N60 | N-Channel Power MOSFET 文件:356.07 Kbytes Page:7 Pages | NELLSEMI 尼尔半导体 | ||
12N60 | 12A, 600V N-CHANNEL POWER MOSFET | UTC 友顺 | ||
600V, SMPS Series N-Channel IGBTs The HGTP12N60A4, HGTG12N60A4 and HGT1S12N60A4S9A are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-stat | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG12N60A4D, HGTP12N60A4D and HGT1S12N60A4DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st | Intersil | |||
12 Amps, 600/650 Volts N-CHANNEL MOSFET The UTC 12N60are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTCs proprietary, planar stripe, DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching p | UTC 友顺 | |||
24A, 600V, UFS SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE The HGTG12N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderatel | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件:358.2 Kbytes Page:7 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A 600V N-channel enhanced field effect transistor 文件:885.41 Kbytes Page:5 Pages | YFWDIODE 佑风微 | |||
N-CHANNEL POWER MOSFET 文件:2.48891 Mbytes Page:8 Pages | SUNMATE 森美特 | |||
高压MOSFET | ETC 知名厂家 | ETC | ||
N-CHANNEL POWER MOSFET 文件:2.48891 Mbytes Page:8 Pages | SUNMATE 森美特 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
N-Channel 650V (D-S) Power MOSFET 文件:2.14186 Mbytes Page:10 Pages | VBSEMI 微碧半导体 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件:358.2 Kbytes Page:7 Pages | UTC 友顺 | |||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件:358.2 Kbytes Page:7 Pages | UTC 友顺 | |||
12 Amps, 600/650 Volts N-CHANNEL MOSFET 文件:358.2 Kbytes Page:7 Pages | UTC 友顺 | |||
12A竊?00V N-CHANNEL MOSFET 文件:451 Kbytes Page:7 Pages | KIA 可易亚半导体 | |||
N-CHANNEL POWER MOSFET 文件:2.48891 Mbytes Page:8 Pages | SUNMATE 森美特 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET | UTC 友顺 | |||
N-CHANNEL ENHANCEMENT MODE MOSFET 文件:204.7 Kbytes Page:5 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-Channel 650V (D-S) Power MOSFET 文件:1.1063 Mbytes Page:10 Pages | VBSEMI 微碧半导体 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 | |||
12A, 600V N-CHANNEL POWER MOSFET 文件:371.21 Kbytes Page:7 Pages | UTC 友顺 | |||
N-CHANNEL JUNCTION FET 文件:379.24 Kbytes Page:8 Pages | UTC 友顺 |
12N60产品属性
- 类型
描述
- 型号
12N60
- 制造商
UTC-IC
- 制造商全称
UTC-IC
- 功能描述
12 Amps, 600/650 Volts N-CHANNEL MOSFET
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
KEFAN/科范微 |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
KODENSHI AUK |
24+ |
TO-220F |
18000 |
绝对原厂原装,长期优势可定货 |
|||
HARRIS/哈里斯 |
24+ |
TO-3P |
22055 |
郑重承诺只做原装进口现货 |
|||
CYSTECHEL |
15+ |
TO-220F |
4500 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ON/安森美 |
2410+ |
TO-220 |
13600 |
原装正品.假一赔百.正规渠道.原厂追溯. |
|||
TO-220 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
|||
耐美NAMC |
23+ |
TO-220F |
375000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
|||
UTC/友顺 |
24+ |
TO-220F |
117 |
只做原厂渠道 可追溯货源 |
|||
FAIRCHILD |
23+ |
TO-263 |
12800 |
公司只有原装,欢迎来电咨询。 |
|||
UTC/友顺 |
2447 |
TO-220F220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
12N60规格书下载地址
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12N60数据表相关新闻
12N60L-TO220F1T-TGML_UTC代理商
12N60L-TO220F1T-TGML_UTC代理商
2023-2-2412N30L-TO252R-TZ1G_UTC代理商
12N30L-TO252R-TZ1G_UTC代理商
2023-2-1612N65L-TO262T-TGML_UTC代理商
12N65L-TO262T-TGML_UTC代理商
2023-2-712-MMF-002-5-F 全新原装
12-MMF-002-5-F
2022-9-1312N10
12N10,全新原装当天发货或门市自取0755-82732291.
2020-6-1612N65KL-TF1-T
联系人:陈先生 电话:18018738768(微信同号) QQ:1005525513 我司有一手货源,价优,可以长期提供大量,优质的货源,专业的渠道,物美价廉是公司与客户之间共同的理念 由于公司型号众多,无法一一上传,如在网站找不到您要的产品,请联系业务员,本司可提供电子元器件配单服务 我司部分现货库存如下: HSMS-2805#L
2020-4-15
DdatasheetPDF页码索引
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