位置：首页 > IC中文资料第3383页 > HGTG12N60D1D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HGTG12N60D1D | 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mo | Intersil |   | |
12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mo | Intersil | | ||
12A, 600V N-Channel IGBT Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only mode | Intersil | |
HGTG12N60D1D产品属性
- 类型
描述
- 型号
HGTG12N60D1D
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris
- 功能描述
Harris TO-247 NXC6A, NXF7D
- 制造商
Harris Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Harris |
23+ |
NA |
864 |
专做原装正品,假一罚百! |
|||
HAR |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
Intersil |
24+ |
TO-247 |
8866 |
||||
HARRIS |
17+ |
TO-247 |
6200 |
||||
HAR |
9610 |
TO-247 |
250 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
N/A |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INTERSIL |
23+ |
TO-252(DPAK) |
8400 |
专注配单,只做原装进口现货 |
|||
INTERSIL |
23+ |
TO-252(DPAK) |
8400 |
专注配单,只做原装进口现货 |
|||
INTERSIL |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
|||
FAIRCHILD |
23+ |
TO-247 |
9526 |
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