This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49171. The diode used in anti-parallel with the IGBT is the development type TA49188.

Features

• 27A, 600V, TC = 25°C

• 600V Switching SOA Capability

• Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150°C

• Short Circuit Rating

• Low Conduction Loss

• Hyperfast Anti-Parallel Diode

• Related Literature

    - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards