27A, 600V, UFS Series N-Channel IGBTs

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be

封装/外壳：TO-247-3 包装：管件 描述：IGBT 600V 27A 104W TO247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be

27A, 600V, UFS Series N-Channel IGBTs

The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop

27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode

This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately be