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位置：首页 > IC中文资料第11866页 > CEU3

CEU3价格

参考价格：￥0.2600

型号：CEU3E2X7R1H103K080AE 品牌：TDK 备注：这里有CEU3多少钱，2025年最近7天走势，今日出价，今日竞价，CEU3批发/采购报价，CEU3行情走势销售排行榜，CEU3报价。
型号 功能描述 生产厂家&企业 LOGO 操作
CEU3

Multilayer Ceramic Chip Capacitors

文件：60.69 Kbytes Page：5 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3053A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-87A,RDS(ON)=5.8mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.1mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3055L

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■60V,8A,RDS(ON)=150mΩ@VGS=10V. RDS(ON)=180mΩ@VGS=5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3055L3

Dual N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3055L5

N-Channel Enhancement Mode Field Effect Transistor

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,75A,RDS(ON)=6.6mW@VGS=10V. RDS(ON)=9.5mW@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3060

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,75A,RDS(ON)=6.6mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=9.5mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3062

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,77A,RDS(ON)=6.5mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=8.5mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3070

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,62A,RDS(ON)=9.5mΩ@VGS=10V. RDS(ON)=13.5mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3080

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,57A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=14mΩ@VGS=4.5V SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability Leadfreeproductisacquired. TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU30N08

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 80V,30A,RDS(ON)=30mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Lead-freeplating;RoHScompliant. RDS(ON)=38mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-100V,-30A,RDS(ON)=76mΩ@VGS=-10V. RDS(ON)=92mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU30P10

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-27A,RDS(ON)=76mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=92mW@VGS=-4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU30P10A

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -100V,-29A,RDS(ON)=55mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. Pb-freeleadplating;RoHScompliant. HalogenFree. RDS(ON)=60mW@VGS=-4.5V. Switchedmode

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,51A,RDS(ON)=10mΩ@VGS=10V. RDS(ON)=17mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3100

N-Channel MOSFET uses advanced trench technology

Description： ThisN-ChannelMOSFETusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(on)withlowgatecharge. Itcanbeusedinawidevarietyofapplications. Features： 1)VDS=30V,ID=55A,RDS(ON)

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CEU3100

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,51A,RDS(ON)=10mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=17mW@VGS=4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3109

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-252-4Lpackage. RDS(ON)=20mW@VGS=4.5V. Lead-freeplating;RoHScompliant. -30V,-18A,RDS(ON)=20mW@VGS=10V. RDS(ON)=30mW@VGS

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3112

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,45A,RDS(ON)=11mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RoHScompliant. RDS(ON)=15mW@VGS=4.5V.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,36A,RDS(ON)=15mΩ@VGS=10V. RDS(ON)=22mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3120

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,36A,RDS(ON)=15mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=22mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3133

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-35A,RDS(ON)=16mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=27mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3159

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

FEATURES 30V,22A,RDS(ON)=12mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=20mW@VGS=4.5V. -30V,-13A,RDS(ON)=32mW@VGS=10V. RDS(ON)=45mW@VGS=4.5V. TO-252-4Lpackage. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3172

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,36A,RDS(ON)=20mΩ@VGS=10V. RDS(ON)=28mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3172

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,36A,RDS(ON)=20mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=32mW@VGS=4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3252

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,25A,RDS(ON)=28mΩ@VGS=10V. RDS(ON)=39mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3254

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V,26A,RDS(ON)=25mW@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. RDS(ON)=39mW@VGS=4.5V. TO-251&TO-252package. Pb-freeleadplating;RoHScompliant. HalogenFree.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-28A,RDS(ON)=32mΩ@VGS=-10V. RDS(ON)=50mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3301

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-28A,RDS(ON)=32mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=50mW@VGS=-4.5V. Leadfreeproductisacquired.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3423

P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■-30V,-18A,RDS(ON)=45mΩ@VGS=-10V. RDS(ON)=80mΩ@VGS=-4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3425

P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V,-20A,RDS(ON)=45mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=80mW@VGS=-4.5V. RoHScompliant.

CET-MOSCET-MOS Technology Corp.

华瑞华瑞功率电子股份有限公司

CET-MOS
CEU3700

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■30V,12A,RDS(ON)=95mΩ@VGS=10V. RDS(ON)=130mΩ@VGS=4.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package.

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3060

N-Channel MOSFET uses advanced trench technology

文件：993.67 Kbytes Page：4 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CEU30N08

CED30N08

文件：577.79 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3120

N-Channel Enhancement Mode Field Effect Transistor

文件：415.04 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3252

N-Channel MOSFET uses advanced trench technology

文件：881.12 Kbytes Page：5 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
CEU3301

P-Channel Enhancement Mode Field Effect Transistor

文件：447.73 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3423

P-Channel Enhancement Mode Field Effect Transistor

文件：400.03 Kbytes Page：4 Pages

CETChino-Excel Technology

华瑞华瑞股份有限公司

CET
CEU3E2

CEU SERIES

文件：1.98285 Mbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H103K080AE

Automotive Grade ( Serial Design )

文件：139.1 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H103K080AE

封装/外壳：0603（1608 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10000PF 50V X7R 0603 电容器 陶瓷电容器

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H103M080AE

封装/外壳：0603（1608 公制） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：CAP CER 10000PF 50V X7R 0603 电容器 陶瓷电容器

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H103M080AE

Automotive Grade ( Serial Design )

文件：139.1 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H153K080AE

Automotive Grade ( Serial Design )

文件：138.94 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H153M080AE

Automotive Grade ( Serial Design )

文件：138.95 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H223K080AE

Automotive Grade ( Serial Design )

文件：138.96 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H223M080AE

Automotive Grade ( Serial Design )

文件：138.96 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H333K080AE

Automotive Grade ( Serial Design )

文件：138.98 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H333M080AE

Automotive Grade ( Serial Design )

文件：138.98 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H472K080AE

Automotive Grade ( Serial Design )

文件：139.08 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H472M080AE

Automotive Grade ( Serial Design )

文件：139.08 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H473K080AE

Automotive Grade ( Serial Design )

文件：138.79 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H473M080AE

Automotive Grade ( Serial Design )

文件：138.79 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H682K080AE

Automotive Grade ( Serial Design )

文件：139.04 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R1H682M080AE

Automotive Grade ( Serial Design )

文件：139.04 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R2A102K080AE

Automotive Grade ( Serial Design )

文件：138.9 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R2A102M080AE

Automotive Grade ( Serial Design )

文件：138.89 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R2A152K080AE

Automotive Grade ( Serial Design )

文件：138.85 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R2A152M080AE

Automotive Grade ( Serial Design )

文件：138.85 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK
CEU3E2X7R2A222K080AE

Automotive Grade ( Serial Design )

文件：138.78 Kbytes Page：1 Pages

TDKTDK Corporation

TDK株式会社东电化（中国）投资有限公司

TDK

CEU3产品属性

  • 类型

    描述

  • 型号

    CEU3

  • 制造商

    TDK

  • 制造商全称

    TDK Electronics

  • 功能描述

    Multilayer Ceramic Chip Capacitors

CEU3供应商更多...

更新时间：2025-8-3 9:32:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
北京京北通宇电子元件有限公司
CEU3133
CET-MOS
24+
con
100
现货常备产品原装可到京北通宇商城查价格
询价
深圳诚思涵科技有限公司
CEU3700
TDK
24+
SMD
9987
公司现货库存,支持实单
询价
北京天阳诚业科贸有限公司
CEU3E2X7R2A332M080AE
TDK
24+
con
35960
查现货到京北通宇商城
询价
深圳市创新迹电子有限公司
CEU3700
CET
23+
TO-252
7300
专注配单,只做原装进口现货
询价
深圳市润联芯城科技有限公司
CEU3252
CET/華瑞
23+
TO-252
50000
原装正品 支持实单
询价
深圳市华睿芯科技有限公司
CEU3700
CET
24+
TO252
20000
全新原厂原装，进口正品现货，正规渠道可含税！！
询价
贸泽芯城（深圳）电子科技有限公司
CEU3E2X7R1H473M080AE
TDK/东电化
23+
36840000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
深圳市赛美科科技有限公司
CEU3423
CETSEMI
新年份
TO-252
33288
原装正品现货,实单带TP来谈!
询价
深圳市中联芯电子有限公司
CEU3060
VBsemi
24+
TO252
18000
原装正品 有挂有货 假一赔十
询价
深圳市柯尔基电子有限公司
CEU3252
CET
23+24
T0-252
38754
原装正品渠道商,提供BOM一站式配单服务
询价

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