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CEU3价格

参考价格：￥0.2600

型号：CEU3E2X7R1H103K080AE 品牌：TDK 备注：这里有CEU3多少钱，2025年最近7天走势，今日出价，今日竞价，CEU3批发/采购报价，CEU3行情走势销售排行榜，CEU3报价。

型号	功能描述	生产厂家企业	LOGO
CEU3	Multilayer Ceramic Chip Capacitors 文件：60.69 Kbytes Page：5 Pages	TDK 东电化	TDK
CEU3053A	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -87A, RDS(ON) = 5.8mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.1mW @VGS = -4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3055L	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 8A, RDS(ON) = 150mΩ @VGS = 10V. RDS(ON) = 180mΩ @VGS = 5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3055L3	Dual N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEU3055L5	N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEU3060	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. RDS(ON) = 9.5mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3060	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 9.5mW @VGS = 4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU3062	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 77A , RDS(ON) = 6.5mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 8.5mW @VGS = 4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3070	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 62A, RDS(ON) = 9.5mΩ @VGS = 10V. RDS(ON) = 13.5mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3080	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V Super high dense cell design for extremely low RDS(ON). High power and current handing capability Lead free product is acquired. TO-251 & TO-252 package.	CET 华瑞	CET
CEU30N08	N-Channel Enhancement Mode Field Effect Transistor FEATURES 80V, 30A, RDS(ON) = 30mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant. RDS(ON) = 38mW @VGS = 4.5V.	CET-MOS 华瑞	CET-MOS
CEU30P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -100V, -30A, RDS(ON) = 76mΩ @VGS = -10V. RDS(ON) = 92mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU30P10	P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -27A, RDS(ON) = 76mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 92mW @VGS = -4.5V.	CET-MOS 华瑞	CET-MOS
CEU30P10A	P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -29A, RDS(ON) = 55 mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. Pb-free lead plating ; RoHS compliant. Halogen Free. RDS(ON) = 60 mW @VGS = -4.5V. Switched mode	CET-MOS 华瑞	CET-MOS
CEU3100	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 51A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3100	N-Channel MOSFET uses advanced trench technology Description： This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features： 1) VDS=30V,ID=55A,RDS(ON)	DOINGTER 杜因特	DOINGTER
CEU3100	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 51A , RDS(ON) = 10mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 17mW @VGS = 4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3109	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-252-4L package. RDS(ON) = 20mW @VGS = 4.5V. Lead-free plating ; RoHS compliant. -30V , -18A , RDS(ON) = 20mW @VGS = 10V. RDS(ON) = 30mW @VGS	CET-MOS 华瑞	CET-MOS
CEU3112	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 45A, RDS(ON) = 11mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RoHS compliant. RDS(ON) = 15mW @VGS = 4.5V.	CET-MOS 华瑞	CET-MOS
CEU3120	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 36A , RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 22mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3120	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A , RDS(ON) = 15mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 22mW @VGS = 4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU3133	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -35A, RDS(ON) = 16mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 27mW @VGS = -4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3159	Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V , 22A , RDS(ON) = 12mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 20mW @VGS = 4.5V. -30V , -13A , RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. TO-252-4L package. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3172	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 36A, RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3172	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 36A, RDS(ON) = 20mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 32mW @VGS = 4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU3252	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 25A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 39mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3254	N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 26A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 39mW @VGS = 4.5V. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.	CET-MOS 华瑞	CET-MOS
CEU3301	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -28A, RDS(ON) = 32mΩ @VGS = -10V. RDS(ON) = 50mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3301	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -28A, RDS(ON) = 32mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 50mW @VGS = -4.5V. Lead free product is acquired.	CET-MOS 华瑞	CET-MOS
CEU3423	P-Channel Enhancement Mode Field Effect Transistor FEATURES ■ -30V, -18A, RDS(ON) = 45mΩ @VGS = -10V. RDS(ON) = 80mΩ @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3425	P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -20A, RDS(ON) = 45mW @VGS = -10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. RDS(ON) = 80mW @VGS = -4.5V. RoHS compliant.	CET-MOS 华瑞	CET-MOS
CEU3700	N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 30V, 12A, RDS(ON) = 95mΩ @VGS = 10V. RDS(ON) = 130mΩ @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-251 & TO-252 package.	CET 华瑞	CET
CEU3055L	N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEU3055L3	Dual N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEU3055L5	N-Channel Enhancement Mode Field Effect Transistor	CET 华瑞	CET
CEU3060	N-Channel MOSFET uses advanced trench technology 文件：993.67 Kbytes Page：4 Pages	DOINGTER 杜因特	DOINGTER
CEU30N08	CED30N08 文件：577.79 Kbytes Page：4 Pages	CET 华瑞	CET
CEU3120	N-Channel Enhancement Mode Field Effect Transistor 文件：415.04 Kbytes Page：4 Pages	CET 华瑞	CET
CEU3252	N-Channel MOSFET uses advanced trench technology 文件：881.12 Kbytes Page：5 Pages	DOINGTER 杜因特	DOINGTER
CEU3301	P-Channel Enhancement Mode Field Effect Transistor 文件：447.73 Kbytes Page：4 Pages	CET 华瑞	CET
CEU3423	P-Channel Enhancement Mode Field Effect Transistor 文件：400.03 Kbytes Page：4 Pages	CET 华瑞	CET
CEU3E2	CEU SERIES 文件：1.98285 Mbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H103K080AE	Automotive Grade ( Serial Design ) 文件：139.1 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H103K080AE	封装/外壳：0603（1608 公制）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：CAP CER 10000PF 50V X7R 0603 电容器陶瓷电容器	TDK 东电化	TDK
CEU3E2X7R1H103M080AE	封装/外壳：0603（1608 公制）包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带描述：CAP CER 10000PF 50V X7R 0603 电容器陶瓷电容器	TDK 东电化	TDK
CEU3E2X7R1H103M080AE	Automotive Grade ( Serial Design ) 文件：139.1 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H153K080AE	Automotive Grade ( Serial Design ) 文件：138.94 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H153M080AE	Automotive Grade ( Serial Design ) 文件：138.95 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H223K080AE	Automotive Grade ( Serial Design ) 文件：138.96 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H223M080AE	Automotive Grade ( Serial Design ) 文件：138.96 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H333K080AE	Automotive Grade ( Serial Design ) 文件：138.98 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H333M080AE	Automotive Grade ( Serial Design ) 文件：138.98 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H472K080AE	Automotive Grade ( Serial Design ) 文件：139.08 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H472M080AE	Automotive Grade ( Serial Design ) 文件：139.08 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H473K080AE	Automotive Grade ( Serial Design ) 文件：138.79 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H473M080AE	Automotive Grade ( Serial Design ) 文件：138.79 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H682K080AE	Automotive Grade ( Serial Design ) 文件：139.04 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R1H682M080AE	Automotive Grade ( Serial Design ) 文件：139.04 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R2A102K080AE	Automotive Grade ( Serial Design ) 文件：138.9 Kbytes Page：1 Pages	TDK 东电化	TDK
CEU3E2X7R2A102M080AE	Automotive Grade ( Serial Design ) 文件：138.89 Kbytes Page：1 Pages	TDK 东电化	TDK

CEU3产品属性

类型
描述
型号
CEU3
制造商
TDK
制造商全称
TDK Electronics
功能描述
Multilayer Ceramic Chip Capacitors

CEU3供应商更多...

更新时间：2025-12-24 23:51:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科达星科技有限公司	CEU3055L	CET	24+	TO-252	27500	原装正品,价格最低!	询价
深圳市得捷芯城科技有限公司	CEU3423	CET/華瑞	24+	NA/	5750	原装现货,当天可交货,原型号开票	询价
深圳市高捷芯城科技有限公司	CEU3E2X7R2A332M080AE	TDK	24+	0603	7350	现货供应,当天可交货!免费送样,原厂技术支持!!!	询价
深圳市凌旭科技有限公司	CEU3120	CET	2016+	TO252	2500	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市明嘉莱科技有限公司	CEU30P10IC	CET/華瑞	25+	TO-252	156767	明嘉莱只做原装正品现货	询价
深圳市科芯源微电子有限公司	CEU3120	CET/華瑞	25+	TO252	54648	百分百原装现货实单必成欢迎询价	询价
中天科工半导体（深圳）有限公司	CEU3172	CET/華瑞	25+	TO-252	33958	CET/華瑞全新特价CEU3172即刻询购立享优惠#长期有货	询价
深圳市华睿芯科技有限公司	CEU3700	CET	24+	TO252	20000	全新原厂原装，进口正品现货，正规渠道可含税！！	询价
深圳市毅创腾电子科技有限公司	CEU3055LA-1	CET	23+	TO252	7000	绝对全新原装!100%保质量特价!请放心订购!	询价
深圳市赛美科科技有限公司	CEU3423	CETSEMI	新年份	TO-252	33288	原装正品现货,实单带TP来谈!	询价

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CEU3规格书下载地址

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CEU3数据表相关新闻

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CEU3价格

CEU3产品属性

CEU3供应商更多...

CEU3芯片相关品牌

CEU3规格书下载地址

CEU3参数引脚图相关

CEU3数据表相关新闻

CF0505XT

CERN科学家设计出能在设施之间运输反物质的装置

CES-434313-28PM-67

CF04V3T2R0F 深圳市得捷芯城电子科技 AVX KEMET 尼康 三洋 钽电容代理商

CF0505XT-1WR3原装正品现货 CF0505XT-1WR3DC-DC电源模块/

CeraCharge电池Z62000Z2910Z01Z05

DdatasheetPDF页码索引

CF04V3T2R0F 深圳市得捷芯城电子科技 AVX KEMET 尼康三洋钽电容代理商