N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 57A, RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 14mΩ @VGS = 4.5V Super high dense cell design for extremely low RDS(ON). High power and current handing capability Lead free product is acquired. TO-251 & TO-252 package.

Inst, 1 Pr #14 Str BC, PVC-NYL Ins E1, OS, Blk PVC Jkt, 600V TC 150V NPLF THHN OR THWN

Product Description UL Instrumentation, 1 Pair 14AWG (7x22) Bare Copper, PVC-NYL Insulation E1 Color Code, Overall Beldfoil® Shield, Black PVC Outer Jacket, 600V TC 150V NPLF THHN OR THWN 90C Dry 75C Wet SUN RES DIR BUR

Pry Out Plugs

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Customer Specification

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Industrial VRS Magnetic Speed Sensors

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My-Com precision switches

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