N-Channel Enhancement Mode Field Effect Transistor

FEATURES 30V, 26A, RDS(ON) = 25mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RDS(ON) = 39mW @VGS = 4.5V. TO-251 & TO-252 package. Pb-free lead plating ; RoHS compliant. Halogen Free.

N Channel MOSFET

Customer Specification

Construction 1) Component 1 1 X 1 HOOKUP a) Conductor 16 (7/24) AWG Tinned Copper 0.060 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.080+/- 0.002 (1) Print ALPHA WIRE E163869-* RU AWM STYLE 1061 80C 300V VW-1 16 AWG --- LLXXXX CSA AWM I A/B 80C 300 VOLTS FT1 CE ROHS {0} * = Factory

Customer Specification

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150V N-Channel MOSFET

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